型号 功能描述 生产厂家 企业 LOGO 操作
NE5550779A-T1A

Silicon Power LDMOS FET

FEATURES • High Output Power : Pout = 38.5 dBm TYP. (VDS = 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High power added efficiency : ηadd = 66 TYP. (VDS= 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High Linear gain : GL = 22.0 dB TYP. (VDS = 7.5 V, IDset = 140 mA, f

RENESAS

瑞萨

NE5550779A-T1A

Silicon Power LDMOS FET

文件:3.56692 Mbytes Page:16 Pages

CEL

Silicon Power LDMOS FET

FEATURES • High Output Power : Pout = 38.5 dBm TYP. (VDS = 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High power added efficiency : ηadd = 66 TYP. (VDS= 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High Linear gain : GL = 22.0 dB TYP. (VDS = 7.5 V, IDset = 140 mA, f

RENESAS

瑞萨

Silicon Power LDMOS FET

文件:3.56692 Mbytes Page:16 Pages

CEL

Silicon Power LDMOS FET

FEATURES • High Output Power : Pout = 38.5 dBm TYP. (VDS = 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High power added efficiency : ηadd = 66 TYP. (VDS= 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High Linear gain : GL = 22.0 dB TYP. (VDS = 7.5 V, IDset = 140 mA, f

RENESAS

瑞萨

Silicon Power LDMOS FET

文件:3.56692 Mbytes Page:16 Pages

CEL

Silicon Power LDMOS FET

FEATURES • High Output Power : Pout = 38.5 dBm TYP. (VDS = 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High power added efficiency : ηadd = 66 TYP. (VDS= 7.5 V, IDset= 140 mA, f = 460 MHz, Pin = 25 dBm) • High Linear gain : GL = 22.0 dB TYP. (VDS = 7.5 V, IDset = 140 mA, f

RENESAS

瑞萨

更新时间:2025-12-8 9:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS/瑞萨
23+
79A
50000
全新原装正品现货,支持订货
RENESAS
原厂封装
9800
原装进口公司现货假一赔百
RENESAS/瑞萨
23+
79A
89630
当天发货全新原装现货
RENESAS
23+
CAN
50000
全新原装正品现货,支持订货
CEL
22+
79A
9000
原厂渠道,现货配单
Renesas
2年内
N/A
16000
英博尔原装优质现货订货渠道商
RENESAS/瑞萨
23+
26261
原厂授权一级代理,专业海外优势订货,价格优势、品种
RENESAS(瑞萨)/IDT
20+
-
5000
RENESAS
79A
185600
一级代理 原装正品假一罚十价格优势长期供货
RENESAS
24+
NA
30617
一级代理全新原装热卖

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