型号 功能描述 生产厂家&企业 LOGO 操作
NE5550279A-T1

Silicon Power LDMOS FET

FEATURES • High Output Power : Pout = 33.0 dBm TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm) • High power added efficiency : ηadd = 68 TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm) • High Linear gain : GL = 22.5 dB TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin

RENESAS

瑞萨

NE5550279A-T1

Silicon Power LDMOS FET

文件:772.41 Kbytes Page:8 Pages

CEL

California Eastern Labs

Silicon Power LDMOS FET

FEATURES • High Output Power : Pout = 33.0 dBm TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm) • High power added efficiency : ηadd = 68 TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm) • High Linear gain : GL = 22.5 dB TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin

RENESAS

瑞萨

Silicon Power LDMOS FET

文件:772.41 Kbytes Page:8 Pages

CEL

California Eastern Labs

Silicon Power LDMOS FET

文件:772.41 Kbytes Page:8 Pages

CEL

California Eastern Labs

封装/外壳:4-SMD,扁平引线 包装:托盘 描述:FET RF 30V 900MHZ 79A 分立半导体产品 晶体管 - FET,MOSFET - 射频

CEL

California Eastern Labs

Silicon Power LDMOS FET

文件:772.41 Kbytes Page:8 Pages

CEL

California Eastern Labs

NE5550279A-T1产品属性

  • 类型

    描述

  • 型号

    NE5550279A-T1

  • 制造商

    California Eastern Laboratories(CEL)

  • 功能描述

    SILICON P-CHANNEL LOW NOISE MOS ROHS COMPLIANT - Tape and Reel

  • 制造商

    California Eastern Laboratories(CEL)

  • 功能描述

    IC FET LDMOS 30V 0.6A 79A-PKG

更新时间:2025-8-13 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS/瑞萨
24+
NA/
4095
原装现货,当天可交货,原型号开票
RENESAS(瑞萨)/IDT
24+
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
RENESAS
1010+
CAN
700
一级代理,专注军工、汽车、医疗、工业、新能源、电力
RENESAS
79A
185600
一级代理 原装正品假一罚十价格优势长期供货
RENESAS(瑞萨)/IDT
20+
-
5000
Renesas
2年内
N/A
16000
英博尔原装优质现货订货渠道商
RENESAS
24+
NA
30617
一级代理全新原装热卖
RENESAS/瑞萨
23+
26261
原厂授权一级代理,专业海外优势订货,价格优势、品种
RENESAS
NA
6784
正品原装--自家现货-实单可谈
CEL
22+
79A
9000
原厂渠道,现货配单

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