Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=57A)

Description Third Generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude t

Power MOSFET(Vdss=55V, Rds(on)=0.020ohm, Id=53A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

N-Channel MOSFET Transistor

• DESCRITION • Ultra Low On-resistance • Fast Switching • FEATURES • Static drain-source on-resistance: RDS(on)≤20mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude t

Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=57A)

Description Third Generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels

Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=70A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. ● Dynamic dv/dt Rating ● Isolated Central Mounting Hole ● 175°C Operating Temperature ● Ease

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude

Power MOSFET

FEATURES • Dynamic dV/dt rating • Isolated central mounting hole • 175 °C operating temperature • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about p

Power MOSFET

FEATURES • Dynamic dV/dt rating • Isolated central mounting hole • 175 °C operating temperature • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about p

Power MOSFET(Vdss=55V, Rds(on)=0.016ohm, Id=64A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

N-Channel MOSFET Transistor

• DESCRITION • Ultra Low On-resistance • Fast Switching • FEATURES • Static drain-source on-resistance: RDS(on)≤16mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude

Power MOSFET

FEATURES • Dynamic dV/dt rating • Isolated central mounting hole • 175 °C operating temperature • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from

Power MOSFET

FEATURES • Dynamic dV/dt rating • Isolated central mounting hole • 175 °C operating temperature • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude

Power MOSFET(Vdss=60V, Rds(on)=0.014ohm, Id=70*A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude

N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 70A@ TC=25℃ • Drain Source Voltage- : VDSS= 60V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.014Ω (Max) • Fast Switching

Power MOSFET

FEATURES • Dynamic dV/dt rating • Isolated central mounting hole • 175 °C operating temperature • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides i

Power MOSFET

FEATURES • Dynamic dV/dt rating • Isolated central mounting hole • 175 °C operating temperature • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides i

Power MOSFET(Vdss=55V, Rds(on)=0.012ohm, Id=81A??

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

N-Channel MOSFET Transistor

• DESCRITION • Ultra Low On-resistance • Fast Switching • FEATURES • Static drain-source on-resistance: RDS(on)≤12mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

Advanced Process Technology

Description The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. ● Advanced Process Technology ● Dynamic dv/dt

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude

isc N-Channel MOSFET Transistor

• FEATURES • With TO-247 packaging • Uninterruptible power supply • High speed switching • Simple drive requirements • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operationz • APPLICATIONS • Switching applications

Power MOSFET(Vdss=60V, Rds(on)=9.0mohm, Id=93A??

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

HEXFET짰 Power MOSFET ( VDSS = 60V , RDS(on) = 9.0m廓 , ID = 93A )

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

Power MOSFET(Vdss=60V, Rds(on)=0.009ohm, Id=70*A)

DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Ultra low on-resistance • Very low thermal resistance • Isolated central mounting hole • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?9991

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Ultra low on-resistance • Very low thermal resistance • Isolated central mounting hole • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?9991

Power MOSFET(Vdss=55V, Rds(on)=0.008ohm, Id=110A??

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designe

N-Channel MOSFET

Description The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. Advanced Process Technology Ultra Low

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

HEXFET Power MOSFET

DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude

Power MOSFET(Vdss=60V, Rds(on)=5.5mohm, Id=130A??

VDSS= 60V RDS(on)= 5.5mΩ ID= 130A‡ Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXF

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

N-CHANNEL POWER MOSFETS

N-CHANNEL POWER MOSFETS

N-CHANNEL POWER MOSFETS

N-CHANNEL POWER MOSFETS

31A, 100V, 0.077 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclud

iscN-Channel MOSFET Transistor

DESCRIPTION • Designed for application such as switching regulators, switching convertors, motor drivers and so on. FEATURES • Drain Current –ID= 31A@ TC=25℃ • Drain Source Voltage- : VDSS= 100V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.077Ω(Max) • SOA is power dissipati

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Isolated central mounting hole • 175 °C operating temperature • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Not

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Isolated central mounting hole • 175 °C operating temperature • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Not

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and imp

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature ■ Lower Leakage Current : 10 μA (Max.) @ VDS = 100V ■ Lower RDS(ON) : 0.041 Ω(Typ.)

Power MOSFET(Vdss=100V, Rds(on)=0,052ohm, Id=33A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

33A, 100V, 0.040 Ohm, N-Channel Power MOSFET

Features • Ultra Low On-Resistance - rDS(ON) = 0.040Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE™ and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www.intersil.com • Peak Current vs Pulse Width Curve • UIS Rating Curve

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

Preferred for commercail-industrial applications where higher power levels preclude the use of TO-220 devices.

Description Third Generation HEXFETs from Internatioal Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclud

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Isolated central mounting hole • 175 °C operating temperature • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Not

Advanced Power MOSFET

FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.032Ω(Typ.)