位置:首页 > IC中文资料第1115页 > IRFP064
IRFP064价格
参考价格:¥57.7754
型号:IRFP064 品牌:Vishay 备注:这里有IRFP064多少钱,2025年最近7天走势,今日出价,今日竞价,IRFP064批发/采购报价,IRFP064行情走势销售排行榜,IRFP064报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
IRFP064 | Power MOSFET(Vdss=60V, Rds(on)=0.009ohm, Id=70*A) DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels | IRF International Rectifier | ||
IRFP064 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude | VishayVishay Siliconix 威世科技威世科技半导体 | ||
IRFP064 | Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Ultra low on-resistance • Very low thermal resistance • Isolated central mounting hole • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?9991 | VishayVishay Siliconix 威世科技威世科技半导体 | ||
IRFP064 | Power MOSFET 文件:1.72153 Mbytes Page:11 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | ||
IRFP064 | Power MOSFET 文件:1.68986 Mbytes Page:9 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | ||
IRFP064 | Power MOSFET 文件:1.68986 Mbytes Page:9 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | ||
IRFP064 | Power MOSFET 文件:1.69898 Mbytes Page:9 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | ||
IRFP064 | iscN-Channel MOSFET Transistor 文件:444.72 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Ultra low on-resistance • Very low thermal resistance • Isolated central mounting hole • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?9991 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Power MOSFET(Vdss=55V, Rds(on)=0.008ohm, Id=110A?? Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designe | IRF International Rectifier | |||
N-Channel MOSFET Description The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. Advanced Process Technology Ultra Low | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊欧翊欧半导体 | |||
HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF International Rectifier | |||
HEXFET Power MOSFET DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels | IRF International Rectifier | |||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Power MOSFET(Vdss=60V, Rds(on)=5.5mohm, Id=130A?? VDSS= 60V RDS(on)= 5.5mΩ ID= 130A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXF | IRF International Rectifier | |||
HEXFET Power MOSFET Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p | IRF International Rectifier | |||
类型:N沟道 漏源电压(Vdss):55V 连续漏极电流(Id):110A 功率(Pd):200W 导通电阻(RDS(on)@Vgs,Id):8mΩ@10V,59A N沟道,55V,110A,8mΩ@10V 文件:612.848 Kbytes Page:9 Pages | ||||
Power MOSFET 文件:1.68986 Mbytes Page:9 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Power MOSFET 文件:1.69898 Mbytes Page:9 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Power MOSFET 文件:1.72153 Mbytes Page:11 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
isc N-Channel MOSFET Transistor 文件:355.64 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
Advanced Process Technology 文件:727.96 Kbytes Page:8 Pages | KERSEMI Kersemi Electronic Co., Ltd. | |||
ULTRA LOW ON RESISTANCE 文件:604.12 Kbytes Page:9 Pages | IRF International Rectifier | |||
N-Channel MOSFET Transistor 文件:204.54 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
ULTRA LOW ON RESISTANCE 文件:604.12 Kbytes Page:9 Pages | IRF International Rectifier | |||
Power MOSFET 文件:1.68986 Mbytes Page:9 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Power MOSFET 文件:1.72153 Mbytes Page:11 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Ultra Low Power 10 MBd Digital CMOS Optocouplers Low input current: 1.6 mA Description The Avago ultra low power ACPL-x6xL digital optocouplers combine an AlGaAs light emitting diode (LED) and an integrated high gain photodetector. The optocoupler consumes extremely low power, at maximum 1.3mA IDD current per channel across temperature. With a forward LED current as low | AVAGOAVAGO TECHNOLOGIES LIMITED 安华高 | |||
Ultra Low Power 10 MBd Digital CMOS Optocouplers 文件:312.54 Kbytes Page:17 Pages | AVAGOAVAGO TECHNOLOGIES LIMITED 安华高 | |||
Low-Power 10-MBd Digital CMOS Optocouplers 文件:1.038069 Mbytes Page:19 Pages | BOARDCOMBroadcom Corporation. 博通公司博通半导体 | |||
PLUG, 4 SOCKET, ATM SERIES 文件:324.32 Kbytes Page:2 Pages | ASS Amphenol Sine Systems Corp. | |||
PLUG, 4 SOCKET, ATM SERIES 文件:324.32 Kbytes Page:2 Pages | ASS Amphenol Sine Systems Corp. |
IRFP064产品属性
- 类型
描述
- 型号
IRFP064
- 功能描述
MOSFET N-Chan 60V 70 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
25+ |
TO-247 |
45000 |
IR全新现货IRFP064N即刻询购立享优惠#长期有排单订 |
|||
英飞凌 | Infineon |
21+ |
10560 |
十年专营,原装现货,假一赔十 |
||||
INFINEON |
23+ |
原封 □ |
21500 |
INFINEON优势 /原装现货长期供应现货支持 |
|||
INFINEON |
24+ |
TO-247 |
20000 |
原装正品支持实单 |
|||
INFINEON/英飞凌 |
24+ |
TO-247 |
18379 |
原装进口假一罚十 |
|||
INFINEON/英飞凌 |
23+ |
TO-247 |
15000 |
原装现货假一赔十 |
|||
VISHAY/威世 |
21+ |
TO-247AC |
8080 |
只做原装,质量保证 |
|||
INFINEON |
21+ |
TO-247 |
30000 |
全新原装公司现货
|
|||
IR |
23+ |
TO-247AC |
65400 |
||||
INFINEON |
25+ |
TO-247 |
5000 |
原装正品!!!优势库存!0755-83210901 |
IRFP064规格书下载地址
IRFP064参数引脚图相关
- l101
- l100
- ku波段
- kt250
- kse13005
- ks20
- km710
- ka5q1265rf
- k9f1208
- k310
- k2698
- k233
- k2055
- k2010
- jumper
- jtag接口
- jk触发器
- j111
- j108
- isd1420
- IRFP255
- IRFP254
- IRFP253
- IRFP252
- IRFP251
- IRFP250MPBF
- IRFP250
- IRFP247
- IRFP246
- IRFP245
- IRFP244PBF
- IRFP244
- IRFP240PBF
- IRFP240
- IRFP23N50LPBF
- IRFP22N60KPBF
- IRFP22N50APBF
- IRFP21N60LPBF
- IRFP17N50LPBF
- IRFP153
- IRFP152
- IRFP151
- IRFP150PBF
- IRFP150NPBF
- IRFP150MPBF
- IRFP150A
- IRFP150
- IRFP140PBF
- IRFP140NPBF
- IRFP1405PBF
- IRFP140
- IRFP133
- IRFP132
- IRFP131
- IRFP130
- IRFP064PBF
- IRFP064NPBF
- IRFP054PBF
- IRFP054NPBF
- IRFP054
- IRFP048RPBF
- IRFP048PBF
- IRFP048NPBF
- IRFP048
- IRFP044NPBF
- IRFP044
- IRFNL210BTA_FP001
- IRFNG50
- IRFNG40
- IRFN450
- IRFN440
- IRFN350
- IRFN340
- IRFN250
- IRFN240
- IRFN150
- IRFN140
- IRFN054
- IRFN044
- IRFML8244TRPBF
- IRFMG50SCX
- IRFMG50
- IRFMG40
- IRFM9240
- IRFM540
- IRFM460
- IRFM450
- IRFM250
- IRFM240
- IRFM120ATF
- IRFL9110TRPBF
- IRFL9110PBF
- IRFL9014TRPBF-CUTTAPE
IRFP064数据表相关新闻
IRFP23N50LPBF
进口代理
2025-4-2IRFP064NPBF
IRFP064NPBF
2023-6-3IRFP140是一款性能优异的MOSFET晶体管,具有低导通电阻、高开关速度、高电压承受能力等特点,广泛应用于工业、消费电子、通信、电源等领域。
IRFP140是一款性能优异的MOSFET晶体管,具有低导通电阻、高开关速度、高电压承受能力等特点,广泛应用于工业、消费电子、通信、电源等领域。
2023-5-27IRFM064
IRFM064,当天发货0755-82732291全新原装现货或门市自取.
2020-8-5IRFM360深圳市唯有度科技有限公司
IRFM360原装正品热卖,价格优惠!欢迎新老客户来电咨询采购!
2019-11-4IRFM350深圳市唯有度科技有限公司
IRFM350原装正品现货热卖,欢迎新老客户来电咨询采购!
2019-11-4
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103