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IRFP064价格
参考价格：￥57.7754
型号：IRFP064 品牌：Vishay 备注：这里有IRFP064多少钱，2026年最近7天走势，今日出价，今日竞价，IRFP064批发/采购报价，IRFP064行情走势销售排行榜，IRFP064报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFP064 | Power MOSFET(Vdss=60V, Rds(on)=0.009ohm, Id=70*A) DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels | IRF |   | |
IRFP064 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude | VISHAYVishay Siliconix 威世威世科技公司 | | |
IRFP064 | Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Ultra low on-resistance • Very low thermal resistance • Isolated central mounting hole • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?9991 | VISHAYVishay Siliconix 威世威世科技公司 | | |
IRFP064 | Power MOSFET 文件：1.72153 Mbytes Page：11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
IRFP064 | Power MOSFET 文件：1.69898 Mbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
IRFP064 | iscN-Channel MOSFET Transistor 文件：444.72 Kbytes Page：2 Pages | ISC 无锡固电 | | |
IRFP064 | Power MOSFET 文件：1.68986 Mbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
IRFP064 | Power MOSFET 文件：1.68986 Mbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
IRFP064 | Power MOSFET | VISHAYVishay Siliconix 威世威世科技公司 | | |
IRFP064 | HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.009 Ohm, ID = 70A | INFINEON 英飞凌 | | |
Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Ultra low on-resistance • Very low thermal resistance • Isolated central mounting hole • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?9991 | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET(Vdss=55V, Rds(on)=0.008ohm, Id=110A?? Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designe | IRF | | ||
N-Channel MOSFET Description The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. Advanced Process Technology Ultra Low | EVVOSEMI 翊欧 | | ||
HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | | ||
HEXFET Power MOSFET DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels | IRF | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET(Vdss=60V, Rds(on)=5.5mohm, Id=130A?? VDSS= 60V RDS(on)= 5.5mΩ ID= 130A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXF | IRF | | ||
HEXFET Power MOSFET Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p | IRF | | ||
类型：N沟道 漏源电压(Vdss)：55V 连续漏极电流(Id)：110A 功率(Pd)：200W 导通电阻(RDS(on)@Vgs,Id)：8mΩ@10V,59A N沟道,55V,110A,8mΩ@10V 文件：612.848 Kbytes Page：9 Pages | | |||
Power MOSFET 文件：1.68986 Mbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：1.69898 Mbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：1.72153 Mbytes Page：11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
isc N-Channel MOSFET Transistor 文件：355.64 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Advanced Process Technology 文件：727.96 Kbytes Page：8 Pages | KERSEMI | | ||
ULTRA LOW ON RESISTANCE 文件：604.12 Kbytes Page：9 Pages | IRF | | ||
N-Channel MOSFET Transistor 文件：204.54 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
ULTRA LOW ON RESISTANCE 文件：604.12 Kbytes Page：9 Pages | IRF | | ||
Power MOSFET 文件：1.68986 Mbytes Page：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：1.72153 Mbytes Page：11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
HEXFET® Power MOSFET | INFINEON 英飞凌 | | ||
LOW POWER JFET INPUT OPERATIONAL AMPLIFIERS Low Power JFET Input Operaional Amplifiers These JFET input operational amplifiers are designed for low power applications. They feature high input impedance, low input bias current and low input offset current. Advanced design techniques allow for higher slew rates, gain bandwidth products and o | MOTOROLA 摩托罗拉 | | ||
LOW POWER JFET INPUT OPERATIONAL AMPLIFIERS Low Power JFET Input Operaional Amplifiers These JFET input operational amplifiers are designed for low power applications. They feature high input impedance, low input bias current and low input offset current. Advanced design techniques allow for higher slew rates, gain bandwidth products and o | MOTOROLA 摩托罗拉 | | ||
LOW POWER JFET INPUT OPERATIONAL AMPLIFIERS Low Power JFET Input Operaional Amplifiers These JFET input operational amplifiers are designed for low power applications. They feature high input impedance, low input bias current and low input offset current. Advanced design techniques allow for higher slew rates, gain bandwidth products and o | MOTOROLA 摩托罗拉 | | ||
LOW POWER JFET INPUT OPERATIONAL AMPLIFIERS Low Power JFET Input Operaional Amplifiers These JFET input operational amplifiers are designed for low power applications. They feature high input impedance, low input bias current and low input offset current. Advanced design techniques allow for higher slew rates, gain bandwidth products and o | MOTOROLA 摩托罗拉 | | ||
LOW POWER JFET INPUT OPERATIONAL AMPLIFIERS Low Power JFET Input Operaional Amplifiers These JFET input operational amplifiers are designed for low power applications. They feature high input impedance, low input bias current and low input offset current. Advanced design techniques allow for higher slew rates, gain bandwidth products and o | MOTOROLA 摩托罗拉 | |
IRFP064产品属性
- 类型
描述
- 型号
IRFP064
- 功能描述
MOSFET N-Chan 60V 70 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
10+ |
TO-247 |
863 |
只做原装正品 |
|||
INFINEON/英飞凌 |
25+ |
TO-247 |
45000 |
IR全新现货IRFP064N即刻询购立享优惠#长期有排单订 |
|||
IR |
24+ |
TO 3P |
161005 |
明嘉莱只做原装正品现货 |
|||
INFINEON |
21+ |
TO-247 |
30000 |
全新原装公司现货
|
|||
IR(国际整流器) |
24+ |
8314 |
只做原装现货假一罚十!价格最低!只卖原装现货 |
||||
IR |
23+ |
TO-247 |
5878 |
进口原装假一罚十特价销售欢迎咨询 |
|||
INFINEON |
24+ |
TO-247 |
8500 |
只做原装正品假一赔十为客户做到零风险!! |
|||
INFINEON/英飞凌 |
25+ |
TO-247 |
15000 |
原装现货假一赔十 |
|||
IR |
25+ |
TO-247 |
9600 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
IR |
25+ |
TO-247 |
20540 |
保证进口原装现货假一赔十 |
IRFP064规格书下载地址
IRFP064参数引脚图相关
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- IRFP251
- IRFP250MPBF
- IRFP250
- IRFP247
- IRFP246
- IRFP245
- IRFP244PBF
- IRFP244
- IRFP240PBF
- IRFP240
- IRFP23N50LPBF
- IRFP22N60KPBF
- IRFP22N50APBF
- IRFP21N60LPBF
- IRFP17N50LPBF
- IRFP153
- IRFP152
- IRFP151
- IRFP150PBF
- IRFP150NPBF
- IRFP150MPBF
- IRFP150A
- IRFP150
- IRFP140PBF
- IRFP140NPBF
- IRFP1405PBF
- IRFP140
- IRFP133
- IRFP132
- IRFP131
- IRFP130
- IRFP064PBF
- IRFP064NPBF
- IRFP054PBF
- IRFP054NPBF
- IRFP054
- IRFP048RPBF
- IRFP048PBF
- IRFP048NPBF
- IRFP048
- IRFP044NPBF
- IRFP044
- IRFNL210BTA_FP001
- IRFNG50
- IRFNG40
- IRFN450
- IRFN440
- IRFN350
- IRFN340
- IRFN250
- IRFN240
- IRFN150
- IRFN140
- IRFN054
- IRFN044
- IRFML8244TRPBF
- IRFMG50SCX
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- IRFM540
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- IRFM450
- IRFM250
- IRFM240
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- IRFL9110TRPBF
- IRFL9110PBF
- IRFL9014TRPBF-CUTTAPE
IRFP064数据表相关新闻
IRFP23N50LPBF
进口代理
2025-4-2IRFP064NPBF
IRFP064NPBF
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IRFP140是一款性能优异的MOSFET晶体管，具有低导通电阻、高开关速度、高电压承受能力等特点，广泛应用于工业、消费电子、通信、电源等领域。
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DdatasheetPDF页码索引
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