Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Ultra low on-resistance • Very low thermal resistance • Isolated central mounting hole • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?9991

Power MOSFET(Vdss=60V, Rds(on)=0.009ohm, Id=70*A)

DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels

iscN-Channel MOSFET Transistor

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Power MOSFET

HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.009 Ohm, ID = 70A

Power MOSFET

文件：1.68986 Mbytes Page：9 Pages

Power MOSFET

文件：1.68986 Mbytes Page：9 Pages

Power MOSFET

文件：1.69898 Mbytes Page：9 Pages

Power MOSFET

文件：1.72153 Mbytes Page：11 Pages

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Ultra low on-resistance • Very low thermal resistance • Isolated central mounting hole • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?9991

Power MOSFET(Vdss=55V, Rds(on)=0.008ohm, Id=110A??

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designe

N-Channel MOSFET

Description The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. Advanced Process Technology Ultra Low

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

HEXFET Power MOSFET

DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude

Power MOSFET(Vdss=60V, Rds(on)=5.5mohm, Id=130A??

VDSS= 60V RDS(on)= 5.5mΩ ID= 130A‡ Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXF

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

类型：N沟道 漏源电压(Vdss)：55V 连续漏极电流(Id)：110A 功率(Pd)：200W 导通电阻(RDS(on)@Vgs,Id)：8mΩ@10V,59A N沟道,55V,110A,8mΩ@10V

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Power MOSFET

文件：1.68986 Mbytes Page：9 Pages

Power MOSFET

文件：1.69898 Mbytes Page：9 Pages

Power MOSFET

文件：1.72153 Mbytes Page：11 Pages

isc N-Channel MOSFET Transistor

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Advanced Process Technology

文件：727.96 Kbytes Page：8 Pages

ULTRA LOW ON RESISTANCE

文件：604.12 Kbytes Page：9 Pages

N-Channel MOSFET Transistor

文件：204.54 Kbytes Page：2 Pages

ULTRA LOW ON RESISTANCE

文件：604.12 Kbytes Page：9 Pages

Power MOSFET

文件：1.72153 Mbytes Page：11 Pages

Power MOSFET

文件：1.68986 Mbytes Page：9 Pages

HEXFET® Power MOSFET

Ultra Low Power 10 MBd Digital CMOS Optocouplers Low input current: 1.6 mA

Description The Avago ultra low power ACPL-x6xL digital optocouplers combine an AlGaAs light emitting diode (LED) and an integrated high gain photodetector. The optocoupler consumes extremely low power, at maximum 1.3mA IDD current per channel across temperature. With a forward LED current as low

Ultra Low Power 10 MBd Digital CMOS Optocouplers

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Low-Power 10-MBd Digital CMOS Optocouplers

文件：1.038069 Mbytes Page：19 Pages

PLUG, 4 SOCKET, ATM SERIES

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PLUG, 4 SOCKET, ATM SERIES

文件：324.32 Kbytes Page：2 Pages