IRFP064价格

参考价格:¥57.7754

型号:IRFP064 品牌:Vishay 备注:这里有IRFP064多少钱,2025年最近7天走势,今日出价,今日竞价,IRFP064批发/采购报价,IRFP064行情走势销售排行榜,IRFP064报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRFP064

Power MOSFET(Vdss=60V, Rds(on)=0.009ohm, Id=70*A)

DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels

IRF

International Rectifier

IRF
IRFP064

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
IRFP064

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Ultra low on-resistance • Very low thermal resistance • Isolated central mounting hole • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?9991

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
IRFP064

Power MOSFET

文件:1.72153 Mbytes Page:11 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
IRFP064

Power MOSFET

文件:1.68986 Mbytes Page:9 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
IRFP064

Power MOSFET

文件:1.68986 Mbytes Page:9 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
IRFP064

Power MOSFET

文件:1.69898 Mbytes Page:9 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
IRFP064

iscN-Channel MOSFET Transistor

文件:444.72 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Ultra low on-resistance • Very low thermal resistance • Isolated central mounting hole • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?9991

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

Power MOSFET(Vdss=55V, Rds(on)=0.008ohm, Id=110A??

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designe

IRF

International Rectifier

IRF

N-Channel MOSFET

Description The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. Advanced Process Technology Ultra Low

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊欧翊欧半导体

EVVOSEMI

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

International Rectifier

IRF

HEXFET Power MOSFET

DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels

IRF

International Rectifier

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

Power MOSFET(Vdss=60V, Rds(on)=5.5mohm, Id=130A??

VDSS= 60V RDS(on)= 5.5mΩ ID= 130A‡ Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXF

IRF

International Rectifier

IRF

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

International Rectifier

IRF

类型:N沟道 漏源电压(Vdss):55V 连续漏极电流(Id):110A 功率(Pd):200W 导通电阻(RDS(on)@Vgs,Id):8mΩ@10V,59A N沟道,55V,110A,8mΩ@10V

文件:612.848 Kbytes Page:9 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

PDF上传者:深圳市亚泰盈科电子有限公司

Infineon

Power MOSFET

文件:1.68986 Mbytes Page:9 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

Power MOSFET

文件:1.69898 Mbytes Page:9 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

Power MOSFET

文件:1.72153 Mbytes Page:11 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

isc N-Channel MOSFET Transistor

文件:355.64 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

Advanced Process Technology

文件:727.96 Kbytes Page:8 Pages

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

ULTRA LOW ON RESISTANCE

文件:604.12 Kbytes Page:9 Pages

IRF

International Rectifier

IRF

N-Channel MOSFET Transistor

文件:204.54 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

ULTRA LOW ON RESISTANCE

文件:604.12 Kbytes Page:9 Pages

IRF

International Rectifier

IRF

Power MOSFET

文件:1.68986 Mbytes Page:9 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

Power MOSFET

文件:1.72153 Mbytes Page:11 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

Ultra Low Power 10 MBd Digital CMOS Optocouplers Low input current: 1.6 mA

Description The Avago ultra low power ACPL-x6xL digital optocouplers combine an AlGaAs light emitting diode (LED) and an integrated high gain photodetector. The optocoupler consumes extremely low power, at maximum 1.3mA IDD current per channel across temperature. With a forward LED current as low

AVAGOAVAGO TECHNOLOGIES LIMITED

安华高

AVAGO

Ultra Low Power 10 MBd Digital CMOS Optocouplers

文件:312.54 Kbytes Page:17 Pages

AVAGOAVAGO TECHNOLOGIES LIMITED

安华高

AVAGO

Low-Power 10-MBd Digital CMOS Optocouplers

文件:1.038069 Mbytes Page:19 Pages

BOARDCOMBroadcom Corporation.

博通公司博通半导体

BOARDCOM

PLUG, 4 SOCKET, ATM SERIES

文件:324.32 Kbytes Page:2 Pages

ASS

Amphenol Sine Systems Corp.

ASS

PLUG, 4 SOCKET, ATM SERIES

文件:324.32 Kbytes Page:2 Pages

ASS

Amphenol Sine Systems Corp.

ASS

IRFP064产品属性

  • 类型

    描述

  • 型号

    IRFP064

  • 功能描述

    MOSFET N-Chan 60V 70 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-8-5 21:28:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON/英飞凌
25+
TO-247
45000
IR全新现货IRFP064N即刻询购立享优惠#长期有排单订
英飞凌 | Infineon
21+
10560
十年专营,原装现货,假一赔十
INFINEON
23+
原封 □
21500
INFINEON优势 /原装现货长期供应现货支持
INFINEON
24+
TO-247
20000
原装正品支持实单
INFINEON/英飞凌
24+
TO-247
18379
原装进口假一罚十
INFINEON/英飞凌
23+
TO-247
15000
原装现货假一赔十
VISHAY/威世
21+
TO-247AC
8080
只做原装,质量保证
INFINEON
21+
TO-247
30000
全新原装公司现货
IR
23+
TO-247AC
65400
INFINEON
25+
TO-247
5000
原装正品!!!优势库存!0755-83210901

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