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型号 功能描述 生产厂家 企业 LOGO 操作
IRFP133

N-CHANNEL POWER MOSFETS

SAMSUNG

三星

L-BAND SPDT SWITCH

DESCRIPTION UPG133G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us

NEC

瑞萨

L-BAND SPDT SWITCH

DESCRIPTION The UPG137GV and UPG138GV are L-Band Single Pole Double Throw (SPDT) GaAs MMIC switches developed for digital cellular, PCS, and WLAN applications. These devices feature wide bandwidth, low insertion loss, and high P1dB. The UPG137GV operates on a +3 to +5 V control voltage, while the

NEC

瑞萨

L-BAND SPDT SWITCH

DESCRIPTION µPG132G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us

NEC

瑞萨

3-Ampere Adjustable Negative Regulators

文件:268.49 Kbytes Page:10 Pages

NSC

国半

3-Ampere Adjustable Negative Regulators

文件:268.49 Kbytes Page:10 Pages

NSC

国半

更新时间:2026-5-25 11:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
23+
TO-247
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
IR
23+
TO-247
8000
只做原装现货
IR
2025+
TO-247
4675
全新原厂原装产品、公司现货销售
IR
22+
TO-247
6000
终端可免费供样,支持BOM配单
IR
23+
TO-247
7000

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