Power MOSFET(Vdss=60V, Rds(on)=5.5mohm, Id=130A??

VDSS= 60V RDS(on)= 5.5mΩ ID= 130A‡ Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXF

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

Ultra Low Power 10 MBd Digital CMOS Optocouplers Low input current: 1.6 mA

Description The Avago ultra low power ACPL-x6xL digital optocouplers combine an AlGaAs light emitting diode (LED) and an integrated high gain photodetector. The optocoupler consumes extremely low power, at maximum 1.3mA IDD current per channel across temperature. With a forward LED current as low

Ultra Low Power 10 MBd Digital CMOS Optocouplers

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Low-Power 10-MBd Digital CMOS Optocouplers

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PLUG, 4 SOCKET, ATM SERIES

文件：324.32 Kbytes Page：2 Pages

PLUG, 4 SOCKET, ATM SERIES

文件：324.32 Kbytes Page：2 Pages