Power MOSFET(Vdss=55V, Rds(on)=0.016ohm, Id=64A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

N-Channel MOSFET Transistor

• DESCRITION • Ultra Low On-resistance • Fast Switching • FEATURES • Static drain-source on-resistance: RDS(on)≤16mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

55V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-247AC 封装

HEXFET Power MOSFET

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ADVANCED PROCESS TECHNOLOGY

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ADVANCED PROCESS TECHNOLOGY

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ADVANCED PROCESS TECHNOLOGY

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Aluminum Electrolytic Capacitors Radial Miniature Long Life

FEATURES • Very long useful life: 3000 h to 4000 h at 105 °C • High reliability • Miniaturized, high CV-product per unit volume • Charge and discharge proof • Polarized aluminum electrolytic capacitors, non-solid electrolyte • Radial leads, cylindrical aluminum case with pressure relief,

Common Mode Choke

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Aluminum Electrolytic Capacitors

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Aluminum Capacitors Radial Miniature Long Life

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Aluminum Capacitors Radial Miniature Long Life

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