Power MOSFET(Vdss=55V, Rds(on)=0.016ohm, Id=64A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

N-Channel MOSFET Transistor

• DESCRITION • Ultra Low On-resistance • Fast Switching • FEATURES • Static drain-source on-resistance: RDS(on)≤16mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

55V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-247AC 封装

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度;

ADVANCED PROCESS TECHNOLOGY

文件：1.52507 Mbytes Page：9 Pages

HEXFET Power MOSFET

文件：1.52411 Mbytes Page：9 Pages

ADVANCED PROCESS TECHNOLOGY

文件：1.52507 Mbytes Page：9 Pages

ADVANCED PROCESS TECHNOLOGY

文件：1.52507 Mbytes Page：9 Pages

Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=70A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. ● Dynamic dv/dt Rating ● Isolated Central Mounting Hole ● 175°C Operating Temperature ● Ease

On-Screen-Display Controller for CRT/LCD Monitor

[MYSON TECHNOLOGY] GENERAL DESCRIPTION MTV048 is designed for monitor applications to display built-in fonts onto monitor screens. The display operation occurs by transferring data and controls information from the micro controller to RAM through a serial data interface. It can execute a ful

Three Phase Half Controlled Rectifier Bridge, B6HK

文件：43.96 Kbytes Page：2 Pages

The THNCFxxxMBA/BAI series CompactFlash card is a flash technology based with ATA interface flash memory card.

文件：526.86 Kbytes Page：48 Pages