HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

ULTRA LOW ON RESISTANCE

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N-Channel MOSFET Transistor

文件：204.54 Kbytes Page：2 Pages

ULTRA LOW ON RESISTANCE

文件：604.12 Kbytes Page：9 Pages

LOW POWER JFET INPUT OPERATIONAL AMPLIFIERS

Low Power JFET Input Operaional Amplifiers These JFET input operational amplifiers are designed for low power applications. They feature high input impedance, low input bias current and low input offset current. Advanced design techniques allow for higher slew rates, gain bandwidth products and o

LOW POWER JFET INPUT OPERATIONAL AMPLIFIERS

Low Power JFET Input Operaional Amplifiers These JFET input operational amplifiers are designed for low power applications. They feature high input impedance, low input bias current and low input offset current. Advanced design techniques allow for higher slew rates, gain bandwidth products and o

LOW POWER JFET INPUT OPERATIONAL AMPLIFIERS

Low Power JFET Input Operaional Amplifiers These JFET input operational amplifiers are designed for low power applications. They feature high input impedance, low input bias current and low input offset current. Advanced design techniques allow for higher slew rates, gain bandwidth products and o

LOW POWER JFET INPUT OPERATIONAL AMPLIFIERS

Low Power JFET Input Operaional Amplifiers These JFET input operational amplifiers are designed for low power applications. They feature high input impedance, low input bias current and low input offset current. Advanced design techniques allow for higher slew rates, gain bandwidth products and o

LOW POWER JFET INPUT OPERATIONAL AMPLIFIERS

Low Power JFET Input Operaional Amplifiers These JFET input operational amplifiers are designed for low power applications. They feature high input impedance, low input bias current and low input offset current. Advanced design techniques allow for higher slew rates, gain bandwidth products and o