HEXFET짰 Power MOSFET ( VDSS = 60V , RDS(on) = 9.0m廓 , ID = 93A )

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

Low Power, 1 MBd Digital Optocoupler

Description The Broadcom® ACPL-M50L (single-channel in SO-5 footprint), ACPL-054L (dual-channel in SO-8 footprint), ACPL-W50L (single-channel in stretched SO-6 footprint), and ACPL-K54L (dual-channel in stretched SO-8 footprint) are low power, low-input current, 1 MBd digital optocouplers. Featu

Low Power, 1 MBd Digital Optocoupler

Description The Broadcom® ACPL-M50L (single-channel in SO-5 footprint), ACPL-054L (dual-channel in SO-8 footprint), ACPL-W50L (single-channel in stretched SO-6 footprint), and ACPL-K54L (dual-channel in stretched SO-8 footprint) are low power, low-input current, 1 MBd digital optocouplers. Featu

Schottky Barrier Diode

文件：38.96 Kbytes Page：2 Pages

Schottky Barrier Diode

文件：49.58 Kbytes Page：2 Pages

Schottky Barrier Diode

文件：50.13 Kbytes Page：2 Pages