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IRFP054N价格
参考价格：￥5.6535
型号：IRFP054NPBF 品牌：INTERNATIONAL 备注：这里有IRFP054N多少钱，2026年最近7天走势，今日出价，今日竞价，IRFP054N批发/采购报价，IRFP054N行情走势销售排行榜，IRFP054N报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFP054N | Power MOSFET(Vdss=55V, Rds(on)=0.012ohm, Id=81A?? Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF |   | |
IRFP054N | N-Channel MOSFET Transistor • DESCRITION • Ultra Low On-resistance • Fast Switching • FEATURES • Static drain-source on-resistance: RDS(on)≤12mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | |
IRFP054N | Advanced Process Technology Description The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. ● Advanced Process Technology ● Dynamic dv/dt | KERSEMI | | |
IRFP054N | 55V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-247AC 封装 | INFINEON 英飞凌 | | |
HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | | ||
ADVANCED PROCESS TECHNOLOGY 文件：1.49981 Mbytes Page：9 Pages | IRF | | ||
ADVANCED PROCESS TECHNOLOGY 文件：1.49981 Mbytes Page：9 Pages | IRF | | ||
ENHANCED-JFET LOW-OFFSET OPERATIONAL AMPLIFIERS 文件：1.02263 Mbytes Page：65 Pages | TI 德州仪器 | | ||
ENHANCED-JFET LOW-OFFSET OPERATIONAL AMPLIFIERS 文件：1.02263 Mbytes Page：65 Pages | TI 德州仪器 | | ||
ENHANCED-JFET LOW-OFFSET OPERATIONAL AMPLIFIERS 文件：1.02263 Mbytes Page：65 Pages | TI 德州仪器 | | ||
ENHANCED-JFET LOW-OFFSET OPERATIONAL AMPLIFIERS 文件：1.02263 Mbytes Page：65 Pages | TI 德州仪器 | | ||
ENHANCED-JFET LOW-OFFSET OPERATIONAL AMPLIFIERS 文件：1.02263 Mbytes Page：65 Pages | TI 德州仪器 | |
IRFP054N产品属性
- 类型
描述
- 型号
IRFP054N
- 功能描述
MOSFET N-CH 55V 81A TO-247AC
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
HEXFET®
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
25+ |
TO-247AC-3 |
11580 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
IR |
23+ |
FAX : 6564815466 |
20000 |
全新原装假一赔十 |
|||
IR |
24+ |
TO247 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
INFINEON/英飞凌 |
25+ |
TO-247 |
45000 |
IR全新现货IRFP054N即刻询购立享优惠#长期有排单订 |
|||
Infineon Technologies |
22+ |
TO2473 |
9000 |
原厂渠道,现货配单 |
|||
23+ |
原厂封装 |
9888 |
专做原装正品,假一罚百! |
||||
IR |
1922+ |
TO-247 |
247 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IR |
24+ |
SOT-1434&NBS |
4500 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
IR |
23+ |
TO-247 |
65400 |
||||
IR |
2015+ |
TO-247AC |
19889 |
一级代理原装现货,特价热卖! |
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IRFP054N规格书下载地址
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DdatasheetPDF页码索引
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