Power MOSFET(Vdss=100V, Rds(on)=0,052ohm, Id=33A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

33A, 100V, 0.040 Ohm, N-Channel Power MOSFET

Features • Ultra Low On-Resistance - rDS(ON) = 0.040Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE™ and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www.intersil.com • Peak Current vs Pulse Width Curve • UIS Rating Curve

N-Channel MOSFET Transistor

文件：334.21 Kbytes Page：2 Pages

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

ADVANCED PROCESS TECHNOLOGY

文件：353.99 Kbytes Page：9 Pages

N-Channel 100-V (D-S) MOSFET

文件：1.68131 Mbytes Page：7 Pages

ADVANCED PROCESS TECHNOLOGY

文件：353.99 Kbytes Page：9 Pages

1/2 (12.7 mm) Single - Turn Wirewound Bushing Mount Type Precision Potentiometer

FEATURES • Ohmic value range: 50  up to 20 k • Smallest size available: 12.7 mm • Mechanical stops on request • High torque and sealed versions available • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

RUGGED and LIGHTWEIGHT ALUMINUM BATTERY HOLDERS

文件：115.71 Kbytes Page：2 Pages

THREADED INSERT, BLIND, REGULAR HEAD STYLE MEDIUM DUTY

文件：123.62 Kbytes Page：1 Pages

Mechanical stops on request

文件：90.76 Kbytes Page：3 Pages

Temperature Sensors Line Guide

文件：736.09 Kbytes Page：11 Pages