Advanced Power MOSFET

FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.032Ω(Typ.)

Power MOSFET(Vdss=100V, Rds(on)=0.035W, Id=42A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

HIGH VOLTAGE POWER MOSFET DIE

FEATURES: ● Fast switching times ● LOW RDS(on) HDMOS™ process ● Rugged polyslllcon gate cell structure ● Excellent high voltage stability ● Low input capacitance ● Improved high temperature reliability APPLICATIONS ● Switching power supplies ● Motor controls ● Audio Amplifiers ● Inver

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Isolated central mounting hole • 175 °C operating temperature • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Not

Power MOSFET(Vdss=100V, Rds(on)=0.035W, Id=42A)

Power MOSFET

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iscN-Channel MOSFET Transistor

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SEMICONDUCTORS

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Power MOSFET

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Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Isolated central mounting hole • 175 °C operating temperature • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Not

Advanced Power MOSFET

FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.032Ω(Typ.)

44A, 100V, 0.030 Ohm, N-Channel Power MOSFET

Features • Ultra Low On-Resistance -rDS(ON)= 0.030Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE™ and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models • Peak Current vs Pulse Width Curve • UIS Rating Curve

Power MOSFET(Vdss=100V, Rds(on)=0.035W, Id=42A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude

HEXFET Power MOSFET

VDSS = 100V RDS(on) = 24mΩ ID = 47A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig

HEXFET Power MOSFET

VDSS = 100V RDS(on) = 24mΩ ID = 47A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig

Power MOSFET

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Power MOSFET

文件：1.50788 Mbytes Page：11 Pages

isc N-Channel MOSFET Transistor

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N-Channel MOSFET Transistor

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100V,60A Heatsink N-Channel Type Power MOSFET

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isc N-Channel MOSFET Transistor

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N-Channel MOSFET Transistor

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采用 TO-247 M 系列封装的 100V 单 N 沟道功率 MOSFET

ADVANCED PROCESS TECHNOLOGY

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Advanced Process Technology, Dynamic dv/dt Rating

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ADVANCED PROCESS TECHNOLOGY

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isc N-Channel MOSFET Transistor

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HEXFET Power MOSFET

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100V,60A Heatsink N-Channel Type Power MOSFET

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44A, 100V, 0.030 Ohm, N-Channel Power MOSFET

N-Channel MOSFET Transistor

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ADVANCED PROCESS TECHNOLOGY

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ADVANCED PROCESS TECHNOLOGY

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Power MOSFET

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isc N-Channel MOSFET Transistor

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SHIELDED SMT POWER INDUCTORS

● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment

MINIATURE FUSES - 5x15 mm

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Easy Identification and Tracing with 10-color Cable

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Limiting continuous current 130A at 85째C

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INTERCONNECT BATTERY HOLDERS

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