Power MOSFET(Vdss=60V, Rds(on)=0.014ohm, Id=70*A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude

N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 70A@ TC=25℃ • Drain Source Voltage- : VDSS= 60V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.014Ω (Max) • Fast Switching

Power MOSFET

FEATURES • Dynamic dV/dt rating • Isolated central mounting hole • 175 °C operating temperature • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides i

Power MOSFET

Power MOSFET(Vdss=60V, Rds(on)=0.014ohm, Id=70*A)

Power MOSFET

文件：1.59347 Mbytes Page：11 Pages

Power MOSFET

文件：1.56651 Mbytes Page：9 Pages

Power MOSFET

文件：1.56179 Mbytes Page：9 Pages

Power MOSFET

文件：1.56179 Mbytes Page：9 Pages

Power MOSFET

FEATURES • Dynamic dV/dt rating • Isolated central mounting hole • 175 °C operating temperature • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides i

N-Channel MOSFET Transistor

• DESCRITION • Ultra Low On-resistance • Fast Switching • FEATURES • Static drain-source on-resistance: RDS(on)≤12mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

Advanced Process Technology

Description The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. ● Advanced Process Technology ● Dynamic dv/dt

Power MOSFET(Vdss=55V, Rds(on)=0.012ohm, Id=81A??

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude

isc N-Channel MOSFET Transistor

• FEATURES • With TO-247 packaging • Uninterruptible power supply • High speed switching • Simple drive requirements • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operationz • APPLICATIONS • Switching applications

Power MOSFET(Vdss=60V, Rds(on)=9.0mohm, Id=93A??

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

HEXFET짰 Power MOSFET ( VDSS = 60V , RDS(on) = 9.0m廓 , ID = 93A )

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

Power MOSFET

文件：1.56179 Mbytes Page：9 Pages

55V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-247AC 封装

ADVANCED PROCESS TECHNOLOGY

文件：1.49981 Mbytes Page：9 Pages

ADVANCED PROCESS TECHNOLOGY

文件：1.49981 Mbytes Page：9 Pages

Power MOSFET

文件：1.56179 Mbytes Page：9 Pages

HEXFET Power MOSFET

文件：3.3841 Mbytes Page：7 Pages

Power MOSFET

文件：1.59347 Mbytes Page：11 Pages

ENHANCED-JFET LOW-OFFSET OPERATIONAL AMPLIFIERS

文件：1.02263 Mbytes Page：65 Pages

ENHANCED-JFET LOW-OFFSET OPERATIONAL AMPLIFIERS

文件：1.02263 Mbytes Page：65 Pages

ENHANCED-JFET LOW-OFFSET OPERATIONAL AMPLIFIERS

文件：1.02263 Mbytes Page：65 Pages

ENHANCED-JFET LOW-OFFSET OPERATIONAL AMPLIFIERS

文件：1.02263 Mbytes Page：65 Pages

ENHANCED-JFET LOW-OFFSET OPERATIONAL AMPLIFIERS

文件：1.02263 Mbytes Page：65 Pages