Power MOSFET(Vdss=60V, Rds(on)=9.0mohm, Id=93A??

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

Power MOSFET(Vdss=60V, Rds(on)=9.0mohm, Id=93A⑧)

HEXFET짰 Power MOSFET ( VDSS = 60V , RDS(on) = 9.0m廓 , ID = 93A )

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

Low Power, 1 MBd Digital Optocoupler

Description The Broadcom® ACPL-M50L (single-channel in SO-5 footprint), ACPL-054L (dual-channel in SO-8 footprint), ACPL-W50L (single-channel in stretched SO-6 footprint), and ACPL-K54L (dual-channel in stretched SO-8 footprint) are low power, low-input current, 1 MBd digital optocouplers. Featu

Low Power, 1 MBd Digital Optocoupler

Description The Broadcom® ACPL-M50L (single-channel in SO-5 footprint), ACPL-054L (dual-channel in SO-8 footprint), ACPL-W50L (single-channel in stretched SO-6 footprint), and ACPL-K54L (dual-channel in stretched SO-8 footprint) are low power, low-input current, 1 MBd digital optocouplers. Featu

Schottky Barrier Diode

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Schottky Barrier Diode

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Schottky Barrier Diode

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