Power MOSFET(Vdss=55V, Rds(on)=0.008ohm, Id=110A??

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designe

N-Channel MOSFET

Description The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. Advanced Process Technology Ultra Low

类型：N沟道 漏源电压(Vdss)：55V 连续漏极电流(Id)：110A 功率(Pd)：200W 导通电阻(RDS(on)@Vgs,Id)：8mΩ@10V,59A N沟道,55V,110A,8mΩ@10V

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isc N-Channel MOSFET Transistor

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采用 TO-247 封装的 55V 单 N 沟道功率 MOSFET

Advanced Process Technology

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HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

ULTRA LOW ON RESISTANCE

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N-Channel MOSFET Transistor

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ULTRA LOW ON RESISTANCE

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Ultra Low Power 10 MBd Digital CMOS Optocouplers Low input current: 1.6 mA

Description The Avago ultra low power ACPL-x6xL digital optocouplers combine an AlGaAs light emitting diode (LED) and an integrated high gain photodetector. The optocoupler consumes extremely low power, at maximum 1.3mA IDD current per channel across temperature. With a forward LED current as low

Wire

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Ultra Low Power 10 MBd Digital CMOS Optocouplers

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Low-Power 10-MBd Digital CMOS Optocouplers

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PLUG, 4 SOCKET, ATM SERIES

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