Power MOSFET(Vdss=55V, Rds(on)=0.020ohm, Id=53A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

N-Channel MOSFET Transistor

• DESCRITION • Ultra Low On-resistance • Fast Switching • FEATURES • Static drain-source on-resistance: RDS(on)≤20mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

采用 TO-247AC 封装的 55V 单 N 通道 HEXFET 功率 MOSFET

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度;

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

ADVANCED PROCESS TECHNOLOGY

文件：1.54744 Mbytes Page：9 Pages

ADVANCED PROCESS TECHNOLOGY

文件：1.54744 Mbytes Page：9 Pages

Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=57A)

Description Third Generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels

N-CHANNEL POWER MOSFET

文件：21.98 Kbytes Page：2 Pages

N-CHANNEL POWER MOSFET

文件：21.39 Kbytes Page：2 Pages

N-CHANNEL POWER MOSFET

文件：22.51 Kbytes Page：2 Pages

N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

文件：14.59 Kbytes Page：2 Pages