Power MOSFET(Vdss=55V, Rds(on)=0.020ohm, Id=53A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

N-Channel MOSFET Transistor

• DESCRITION • Ultra Low On-resistance • Fast Switching • FEATURES • Static drain-source on-resistance: RDS(on)≤20mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

采用 TO-247AC 封装的 55V 单 N 通道 HEXFET 功率 MOSFET

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

ADVANCED PROCESS TECHNOLOGY

文件：1.54744 Mbytes Page：9 Pages

ADVANCED PROCESS TECHNOLOGY

文件：1.54744 Mbytes Page：9 Pages

Aluminum Capacitors Radial Standard, High Voltage

文件：394.56 Kbytes Page：6 Pages

ASS 0142 CO

文件：558.99 Kbytes Page：1 Pages

ASS 0981 CO

文件：303.68 Kbytes Page：1 Pages

ADSL LINE TRANSFORMER SURFACE MOUNT MAGNETICS

文件：371 Kbytes Page：1 Pages

Limit Alarms (rotary switch adj.) AL-UNIT

文件：127.66 Kbytes Page：4 Pages