31A, 100V, 0.077 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclud

iscN-Channel MOSFET Transistor

DESCRIPTION • Designed for application such as switching regulators, switching convertors, motor drivers and so on. FEATURES • Drain Current –ID= 31A@ TC=25℃ • Drain Source Voltage- : VDSS= 100V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.077Ω(Max) • SOA is power dissipati

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Isolated central mounting hole • 175 °C operating temperature • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Not

Power MOSFET

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Power MOSFET

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Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Isolated central mounting hole • 175 °C operating temperature • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Not

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and imp

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature ■ Lower Leakage Current : 10 μA (Max.) @ VDS = 100V ■ Lower RDS(ON) : 0.041 Ω(Typ.)

Power MOSFET(Vdss=100V, Rds(on)=0,052ohm, Id=33A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

33A, 100V, 0.040 Ohm, N-Channel Power MOSFET

Features • Ultra Low On-Resistance - rDS(ON) = 0.040Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE™ and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www.intersil.com • Peak Current vs Pulse Width Curve • UIS Rating Curve

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclud

Preferred for commercail-industrial applications where higher power levels preclude the use of TO-220 devices.

Description Third Generation HEXFETs from Internatioal Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels

Power MOSFET

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Power MOSFET

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N-Channel MOSFET Transistor

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Advanced Process Technology

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HEXFET짰 Power MOSFET

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Advanced Process Technology

文件：270.29 Kbytes Page：9 Pages

isc N-Channel MOSFET Transistor

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N-Channel MOSFET Transistor

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N-Channel 100-V (D-S) MOSFET

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ADVANCED PROCESS TECHNOLOGY

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ADVANCED PROCESS TECHNOLOGY

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Power MOSFET

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isc N-Channel MOSFET Transistor

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1/2 (12.7 mm) Single - Turn Wirewound Bushing Mount Type Precision Potentiometer

FEATURES • Ohmic value range: 50  up to 20 k • Smallest size available: 12.7 mm • Mechanical stops on request • High torque and sealed versions available • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

RUGGED and LIGHTWEIGHT ALUMINUM BATTERY HOLDERS

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THREADED INSERT, BLIND, REGULAR HEAD STYLE MEDIUM DUTY

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Temperature Sensors Line Guide

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Mechanical stops on request

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