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IRFP048价格
参考价格:¥40.2795
型号:IRFP048 品牌:Int'L 备注:这里有IRFP048多少钱,2026年最近7天走势,今日出价,今日竞价,IRFP048批发/采购报价,IRFP048行情走势销售排行榜,IRFP048报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFP048 | Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=70A) Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. ● Dynamic dv/dt Rating ● Isolated Central Mounting Hole ● 175°C Operating Temperature ● Ease | IRF | ||
IRFP048 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude | VISHAYVishay Siliconix 威世威世科技公司 | ||
IRFP048 | Power MOSFET FEATURES • Dynamic dV/dt rating • Isolated central mounting hole • 175 °C operating temperature • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about p | VISHAYVishay Siliconix 威世威世科技公司 | ||
IRFP048 | Power MOSFET | VISHAYVishay Siliconix 威世威世科技公司 | ||
IRFP048 | Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=70A) | INFINEON 英飞凌 | ||
IRFP048 | Power MOSFET 文件:1.58435 Mbytes Page:9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | ||
IRFP048 | iscN-Channel MOSFET Transistor 文件:444.81 Kbytes Page:2 Pages | ISC 无锡固电 | ||
IRFP048 | Power MOSFET 文件:1.61131 Mbytes Page:11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | ||
IRFP048 | Power MOSFET 文件:1.57958 Mbytes Page:9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | ||
IRFP048 | Power MOSFET 文件:1.57958 Mbytes Page:9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | ||
Power MOSFET FEATURES • Dynamic dV/dt rating • Isolated central mounting hole • 175 °C operating temperature • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about p | VISHAYVishay Siliconix 威世威世科技公司 | |||
N-Channel MOSFET Transistor • DESCRITION • Ultra Low On-resistance • Fast Switching • FEATURES • Static drain-source on-resistance: RDS(on)≤16mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | |||
Power MOSFET(Vdss=55V, Rds(on)=0.016ohm, Id=64A) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | |||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude | VISHAYVishay Siliconix 威世威世科技公司 | |||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude | VISHAYVishay Siliconix 威世威世科技公司 | |||
Power MOSFET FEATURES • Dynamic dV/dt rating • Isolated central mounting hole • 175 °C operating temperature • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from | VISHAYVishay Siliconix 威世威世科技公司 | |||
Power MOSFET FEATURES • Dynamic dV/dt rating • Isolated central mounting hole • 175 °C operating temperature • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from | VISHAYVishay Siliconix 威世威世科技公司 | |||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude | VISHAYVishay Siliconix 威世威世科技公司 | |||
Power MOSFET 文件:1.57958 Mbytes Page:9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
Power MOSFET 文件:1.61131 Mbytes Page:11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
ADVANCED PROCESS TECHNOLOGY 文件:1.52507 Mbytes Page:9 Pages | IRF | |||
HEXFET Power MOSFET 文件:1.52411 Mbytes Page:9 Pages | IRF | |||
ADVANCED PROCESS TECHNOLOGY 文件:1.52507 Mbytes Page:9 Pages | IRF | |||
ADVANCED PROCESS TECHNOLOGY 文件:1.52507 Mbytes Page:9 Pages | IRF | |||
Power MOSFET 文件:1.61131 Mbytes Page:11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
Power MOSFET 文件:1.57958 Mbytes Page:9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
Power MOSFET 文件:1.91641 Mbytes Page:9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
Power MOSFET 文件:1.91641 Mbytes Page:9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
iscN-Channel MOSFET Transistor 文件:444.82 Kbytes Page:2 Pages | ISC 无锡固电 | |||
Power MOSFET | VISHAYVishay Siliconix 威世威世科技公司 | |||
Power MOSFET 文件:1.91641 Mbytes Page:9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
Power MOSFET 文件:1.91641 Mbytes Page:9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
HEXFET Power MOSFET 文件:2.31304 Mbytes Page:8 Pages | IRF | |||
Power MOSFET 文件:1.29533 Mbytes Page:11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
On-Screen-Display Controller for CRT/LCD Monitor [MYSON TECHNOLOGY] GENERAL DESCRIPTION MTV048 is designed for monitor applications to display built-in fonts onto monitor screens. The display operation occurs by transferring data and controls information from the micro controller to RAM through a serial data interface. It can execute a ful | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
Three Phase Half Controlled Rectifier Bridge, B6HK 文件:43.96 Kbytes Page:2 Pages | IXYS 艾赛斯 | |||
The THNCFxxxMBA/BAI series CompactFlash card is a flash technology based with ATA interface flash memory card. 文件:526.86 Kbytes Page:48 Pages | TOSHIBA 东芝 |
IRFP048产品属性
- 类型
描述
- 型号
IRFP048
- 功能描述
MOSFET N-Chan 60V 70 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
26+ |
TO-247 |
35890 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
VISHAY/威世 |
24+ |
NA |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
IR |
2015+ |
TO-247AC |
12500 |
全新原装,现货库存长期供应 |
|||
原装 |
1923+ |
TO-3P |
9200 |
公司原装现货假一罚十特价欢迎来电咨询 |
|||
24+ |
TO-220 |
20 |
|||||
Infineon Technologies |
22+ |
TO2473 |
9000 |
原厂渠道,现货配单 |
|||
IR |
24+ |
TO-247 |
39197 |
郑重承诺只做原装进口现货 |
|||
IR |
23+/24+ |
TO-247 |
9865 |
原包原标签100%进口原装可开13%税 |
|||
Infineon |
24+ |
NA |
3723 |
进口原装正品优势供应 |
|||
VISHAY |
24+ |
NA |
35000 |
只做原装正品现货 欢迎来电查询15919825718 |
IRFP048规格书下载地址
IRFP048参数引脚图相关
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- IRFL4315PBF
- IRFL4310TRPBF
- IRFL4310TR
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DdatasheetPDF页码索引
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