IRFP048价格

参考价格:¥40.2795

型号:IRFP048 品牌:Int'L 备注:这里有IRFP048多少钱,2024年最近7天走势,今日出价,今日竞价,IRFP048批发/采购报价,IRFP048行情走势销售排行榜,IRFP048报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRFP048

PowerMOSFET(Vdss=60V,Rds(on)=0.018ohm,Id=70A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ●Dynamicdv/dtRating ●IsolatedCentralMountingHole ●175°COperatingTemperature ●Ease

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRFP048

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude

VishayVishay Siliconix

威世科技

Vishay
IRFP048

PowerMOSFET

FEATURES •DynamicdV/dtrating •Isolatedcentralmountinghole •175°Coperatingtemperature •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutp

VishayVishay Siliconix

威世科技

Vishay
IRFP048

iscN-ChannelMOSFETTransistor

文件:444.81 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IRFP048

PowerMOSFET

文件:1.61131 Mbytes Page:11 Pages

VishayVishay Siliconix

威世科技

Vishay
IRFP048

PowerMOSFET

文件:1.57958 Mbytes Page:9 Pages

VishayVishay Siliconix

威世科技

Vishay
IRFP048

PowerMOSFET

文件:1.57958 Mbytes Page:9 Pages

VishayVishay Siliconix

威世科技

Vishay
IRFP048

PowerMOSFET

文件:1.58435 Mbytes Page:9 Pages

TFUNKVishay Telefunken

威世威世(VISHAY)集团

TFUNK

PowerMOSFET

FEATURES •DynamicdV/dtrating •Isolatedcentralmountinghole •175°Coperatingtemperature •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutp

VishayVishay Siliconix

威世科技

Vishay

N-ChannelMOSFETTransistor

•DESCRITION •UltraLowOn-resistance •FastSwitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤16mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

PowerMOSFET(Vdss=55V,Rds(on)=0.016ohm,Id=64A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

FEATURES •DynamicdV/dtrating •Isolatedcentralmountinghole •175°Coperatingtemperature •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION ThirdgenerationpowerMOSFETsfrom

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

FEATURES •DynamicdV/dtrating •Isolatedcentralmountinghole •175°Coperatingtemperature •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION ThirdgenerationpowerMOSFETsfrom

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:1.57958 Mbytes Page:9 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:1.61131 Mbytes Page:11 Pages

VishayVishay Siliconix

威世科技

Vishay

ADVANCEDPROCESSTECHNOLOGY

文件:1.52507 Mbytes Page:9 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

HEXFETPowerMOSFET

文件:1.52411 Mbytes Page:9 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

ADVANCEDPROCESSTECHNOLOGY

文件:1.52507 Mbytes Page:9 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

PowerMOSFET

文件:1.57958 Mbytes Page:9 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:1.61131 Mbytes Page:11 Pages

VishayVishay Siliconix

威世科技

Vishay

iscN-ChannelMOSFETTransistor

文件:444.82 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

PowerMOSFET

文件:1.91641 Mbytes Page:9 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:1.91641 Mbytes Page:9 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:1.91641 Mbytes Page:9 Pages

VishayVishay Siliconix

威世科技

Vishay

HEXFETPowerMOSFET

文件:2.31304 Mbytes Page:8 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

PowerMOSFET

文件:1.91641 Mbytes Page:9 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:1.29533 Mbytes Page:11 Pages

VishayVishay Siliconix

威世科技

Vishay

AluminumElectrolyticCapacitorsRadialMiniatureLongLife

FEATURES •Verylongusefullife:3000hto4000hat 105°C •Highreliability •Miniaturized,highCV-productperunitvolume •Chargeanddischargeproof •Polarizedaluminumelectrolyticcapacitors,non-solid electrolyte •Radialleads,cylindricalaluminumcasewithpressure relief,

VishayVishay Siliconix

威世科技

Vishay

AluminumElectrolyticCapacitors

文件:120.68 Kbytes Page:8 Pages

VishayVishay Siliconix

威世科技

Vishay

AluminumCapacitorsRadialMiniatureLongLife

文件:107.04 Kbytes Page:8 Pages

VishayVishay Siliconix

威世科技

Vishay

AluminumCapacitorsRadialMiniatureLongLife

文件:111.8 Kbytes Page:8 Pages

VishayVishay Siliconix

威世科技

Vishay

InductiveSensors

文件:104.37 Kbytes Page:2 Pages

BalluffBalluff Korea Ltd.

巴鲁夫巴鲁夫自动化(上海)有限公司

Balluff

IRFP048产品属性

  • 类型

    描述

  • 型号

    IRFP048

  • 功能描述

    MOSFET N-Chan 60V 70 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2024-4-26 14:08:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INF
22+
ORIGINAL
25800
原装正品,品质保证,值得你信赖.
IR
22+
TO247
9000
原装正品
IR/国际整流器
21+
TO-247
12800
公司只做原装,诚信经营
IR/国际整流器
21+
TO-247
12800
正规渠道,只有原装!
IR
21+
TO247
10026
一级代理,专注军工、汽车、医疗、工业、新能源、电力
VISHAY
23+
TO-247-3
50000
原装正品 支持实单
VISHAY
23+
TO-247AC
589610
新到现货 原厂一手货源 价格秒杀代理!
Infineon/英飞凌
2339+
TO-247(AC)
32280
原装现货 假一罚十!十年信誉只做原装!
IR
23+
QFP
3200
全新原装、诚信经营、公司现货销售
IR
23+
TO-247AC-
7750
全新原装优势

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