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位置：首页 > IC中文资料第1115页 > IRFP048

IRFP048价格

参考价格：￥40.2795

型号：IRFP048 品牌：Int'L 备注：这里有IRFP048多少钱，2025年最近7天走势，今日出价，今日竞价，IRFP048批发/采购报价，IRFP048行情走势销售排行榜，IRFP048报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRFP048

Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=70A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. ● Dynamic dv/dt Rating ● Isolated Central Mounting Hole ● 175°C Operating Temperature ● Ease

IRF

IRFP048

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude

VishayVishay Siliconix

威世科技威世科技半导体

IRFP048

Power MOSFET

FEATURES • Dynamic dV/dt rating • Isolated central mounting hole • 175 °C operating temperature • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about p

VishayVishay Siliconix

威世科技威世科技半导体

IRFP048

iscN-Channel MOSFET Transistor

文件：444.81 Kbytes Page：2 Pages

ISC

无锡固电

IRFP048

Power MOSFET

文件：1.61131 Mbytes Page：11 Pages

VishayVishay Siliconix

威世科技威世科技半导体

IRFP048

Power MOSFET

文件：1.57958 Mbytes Page：9 Pages

VishayVishay Siliconix

威世科技威世科技半导体

IRFP048

Power MOSFET

文件：1.57958 Mbytes Page：9 Pages

VishayVishay Siliconix

威世科技威世科技半导体

IRFP048

Power MOSFET

文件：1.58435 Mbytes Page：9 Pages

TFUNK

威世

IRFP048_V02

Power MOSFET

FEATURES • Dynamic dV/dt rating • Isolated central mounting hole • 175 °C operating temperature • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about p

VishayVishay Siliconix

威世科技威世科技半导体

IRFP048N

N-Channel MOSFET Transistor

• DESCRITION • Ultra Low On-resistance • Fast Switching • FEATURES • Static drain-source on-resistance: RDS(on)≤16mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

IRFP048N

Power MOSFET(Vdss=55V, Rds(on)=0.016ohm, Id=64A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRFP048PBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude

VishayVishay Siliconix

威世科技威世科技半导体

IRFP048R

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude

VishayVishay Siliconix

威世科技威世科技半导体

IRFP048R

Power MOSFET

FEATURES • Dynamic dV/dt rating • Isolated central mounting hole • 175 °C operating temperature • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from

VishayVishay Siliconix

威世科技威世科技半导体

IRFP048R_V01

Power MOSFET

FEATURES • Dynamic dV/dt rating • Isolated central mounting hole • 175 °C operating temperature • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from

VishayVishay Siliconix

威世科技威世科技半导体

IRFP048RPBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude

VishayVishay Siliconix

威世科技威世科技半导体

IRFP048_11

Power MOSFET

文件：1.57958 Mbytes Page：9 Pages

VishayVishay Siliconix

威世科技威世科技半导体

IRFP048_V01

Power MOSFET

文件：1.61131 Mbytes Page：11 Pages

VishayVishay Siliconix

威世科技威世科技半导体

IRFP048NPBF

ADVANCED PROCESS TECHNOLOGY

文件：1.52507 Mbytes Page：9 Pages

IRF

IRFP048NPBF

HEXFET Power MOSFET

文件：1.52411 Mbytes Page：9 Pages

IRF

IRFP048NPBF..

ADVANCED PROCESS TECHNOLOGY

文件：1.52507 Mbytes Page：9 Pages

IRF

IRFP048NPBF_15

ADVANCED PROCESS TECHNOLOGY

文件：1.52507 Mbytes Page：9 Pages

IRF

IRFP048PBF

Power MOSFET

文件：1.57958 Mbytes Page：9 Pages

VishayVishay Siliconix

威世科技威世科技半导体

IRFP048PBF

Power MOSFET

文件：1.61131 Mbytes Page：11 Pages

VishayVishay Siliconix

威世科技威世科技半导体

IRFP048R

iscN-Channel MOSFET Transistor

文件：444.82 Kbytes Page：2 Pages

ISC

无锡固电

IRFP048R

Power MOSFET

文件：1.91641 Mbytes Page：9 Pages

VishayVishay Siliconix

威世科技威世科技半导体

IRFP048R

Power MOSFET

文件：1.91641 Mbytes Page：9 Pages

VishayVishay Siliconix

威世科技威世科技半导体

IRFP048R_11

Power MOSFET

文件：1.91641 Mbytes Page：9 Pages

VishayVishay Siliconix

威世科技威世科技半导体

IRFP048RPBF

HEXFET Power MOSFET

文件：2.31304 Mbytes Page：8 Pages

IRF

IRFP048RPBF

Power MOSFET

文件：1.91641 Mbytes Page：9 Pages

VishayVishay Siliconix

威世科技威世科技半导体

IRFP048RPBF

Power MOSFET

文件：1.29533 Mbytes Page：11 Pages

VishayVishay Siliconix

威世科技威世科技半导体

048RML

Aluminum Electrolytic Capacitors Radial Miniature Long Life

FEATURES • Very long useful life: 3000 h to 4000 h at 105 °C • High reliability • Miniaturized, high CV-product per unit volume • Charge and discharge proof • Polarized aluminum electrolytic capacitors, non-solid electrolyte • Radial leads, cylindrical aluminum case with pressure relief,

VishayVishay Siliconix

威世科技威世科技半导体

048

Common Mode Choke

文件：493.81 Kbytes Page：1 Pages

TRACOPOWER

048RML

Aluminum Electrolytic Capacitors

文件：120.68 Kbytes Page：8 Pages

VishayVishay Siliconix

威世科技威世科技半导体

048RML

Aluminum Capacitors Radial Miniature Long Life

文件：107.04 Kbytes Page：8 Pages

VishayVishay Siliconix

威世科技威世科技半导体

048RML

Aluminum Capacitors Radial Miniature Long Life

文件：111.8 Kbytes Page：8 Pages

VishayVishay Siliconix

威世科技威世科技半导体

IRFP048产品属性

  • 类型

    描述

  • 型号

    IRFP048

  • 功能描述

    MOSFET N-Chan 60V 70 Amp

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS（导通）

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

IRFP048供应商更多...

更新时间：2025-8-16 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市得捷芯城科技有限公司
IRFP048PBF
IR
24+
NA/
13276
原装现货,当天可交货,原型号开票
询价
深圳市凌旭科技有限公司
IRFP048NPBF
IR
2016+
TO-247
3000
公司只做原装,假一罚十,可开17%增值税发票!
询价
上海意淼电子科技有限公司
IRFP048NPBF
IR
23+
TO-247
20000
全新原装假一赔十
询价
深圳市纳艾斯科技有限公司
IRFP048PBF
VISHAY/威世
24+
NA
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
询价
深圳市威雅利发展有限公司
IRFP048PBF
IR
21+
TO247
10026
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳市昌和盛利电子有限公司
IRFP048
IR
23+
TO-247
35890
询价
深圳市明嘉莱科技有限公司
IRFP048其他被动元件
IR
24+
TO 3P
161475
明嘉莱只做原装正品现货
询价
深圳市科恒伟业电子有限公司
IRFP048N
IOR
2016+
TO-3P
6528
只做进口原装现货!假一赔十!
询价
深圳市赛尔通科技有限公司
IRFP048NPBF
IR
23+
TO-247
65400
询价
深圳市富利微电子科技有限公司
IRFP048NPBF
IR/国际整流器
24+
TO-247
30000
原装正品公司现货,假一赔十!
询价

IRFP048芯片相关品牌

IRFP048规格书下载地址

IRFP048参数引脚图相关

IRFP048数据表相关新闻

DdatasheetPDF页码索引

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