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IRFP048价格

参考价格:¥40.2795

型号:IRFP048 品牌:Int'L 备注:这里有IRFP048多少钱,2026年最近7天走势,今日出价,今日竞价,IRFP048批发/采购报价,IRFP048行情走势销售排行榜,IRFP048报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRFP048

Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=70A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. ● Dynamic dv/dt Rating ● Isolated Central Mounting Hole ● 175°C Operating Temperature ● Ease

IRF

IRFP048

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude

VISHAYVishay Siliconix

威世威世科技公司

IRFP048

Power MOSFET

FEATURES • Dynamic dV/dt rating • Isolated central mounting hole • 175 °C operating temperature • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about p

VISHAYVishay Siliconix

威世威世科技公司

IRFP048

Power MOSFET

• Dynamic dV/dt rating\n• Isolated central mounting hole\n• 175 °C operating temperature;

VISHAYVishay Siliconix

威世威世科技公司

IRFP048

Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=70A)

INFINEON

英飞凌

IRFP048

Power MOSFET

文件:1.58435 Mbytes Page:9 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRFP048

iscN-Channel MOSFET Transistor

文件:444.81 Kbytes Page:2 Pages

ISC

无锡固电

IRFP048

Power MOSFET

文件:1.61131 Mbytes Page:11 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRFP048

Power MOSFET

文件:1.57958 Mbytes Page:9 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRFP048

Power MOSFET

文件:1.57958 Mbytes Page:9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Dynamic dV/dt rating • Isolated central mounting hole • 175 °C operating temperature • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about p

VISHAYVishay Siliconix

威世威世科技公司

N-Channel MOSFET Transistor

• DESCRITION • Ultra Low On-resistance • Fast Switching • FEATURES • Static drain-source on-resistance: RDS(on)≤16mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

Power MOSFET(Vdss=55V, Rds(on)=0.016ohm, Id=64A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Dynamic dV/dt rating • Isolated central mounting hole • 175 °C operating temperature • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

·Dynamic dV/dt rating\n·Isolated central mounting hole\n·175 °C operating temperature;

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Dynamic dV/dt rating • Isolated central mounting hole • 175 °C operating temperature • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:1.57958 Mbytes Page:9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:1.61131 Mbytes Page:11 Pages

VISHAYVishay Siliconix

威世威世科技公司

ADVANCED PROCESS TECHNOLOGY

文件:1.52507 Mbytes Page:9 Pages

IRF

HEXFET Power MOSFET

文件:1.52411 Mbytes Page:9 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件:1.52507 Mbytes Page:9 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件:1.52507 Mbytes Page:9 Pages

IRF

Power MOSFET

文件:1.61131 Mbytes Page:11 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:1.57958 Mbytes Page:9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:1.91641 Mbytes Page:9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:1.91641 Mbytes Page:9 Pages

VISHAYVishay Siliconix

威世威世科技公司

iscN-Channel MOSFET Transistor

文件:444.82 Kbytes Page:2 Pages

ISC

无锡固电

Power MOSFET

文件:1.91641 Mbytes Page:9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:1.91641 Mbytes Page:9 Pages

VISHAYVishay Siliconix

威世威世科技公司

HEXFET Power MOSFET

文件:2.31304 Mbytes Page:8 Pages

IRF

Power MOSFET

文件:1.29533 Mbytes Page:11 Pages

VISHAYVishay Siliconix

威世威世科技公司

On-Screen-Display Controller for CRT/LCD Monitor

[MYSON TECHNOLOGY] GENERAL DESCRIPTION MTV048 is designed for monitor applications to display built-in fonts onto monitor screens. The display operation occurs by transferring data and controls information from the micro controller to RAM through a serial data interface. It can execute a ful

ETCList of Unclassifed Manufacturers

未分类制造商

Three Phase Half Controlled Rectifier Bridge, B6HK

文件:43.96 Kbytes Page:2 Pages

IXYS

艾赛斯

The THNCFxxxMBA/BAI series CompactFlash card is a flash technology based with ATA interface flash memory card.

文件:526.86 Kbytes Page:48 Pages

TOSHIBA

东芝

IRFP048产品属性

  • 类型

    描述

  • Package :

    TO-247

  • VDS max:

    55.0V

  • RDS (on)(@10V) max:

    16.0mΩ

  • RDS (on) max:

    16.0mΩ

  • Polarity :

    N

  • ID (@ TC=100°C) max:

    44.0A

  • ID  max:

    44.0A

  • ID (@ TC=25°C) max:

    62.0A

  • Ptot max:

    130.0W

  • QG :

    59.3nC 

  • Mounting :

    THT

  • Tj max:

    175.0°C

  • Qgd :

    26.0nC 

  • RthJC max:

    1.2K/W

  • VGS max:

    20.0V

更新时间:2026-5-16 22:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
2016+
TO-247
3000
公司只做原装,假一罚十,可开17%增值税发票!
IR
23+
TO-247
20000
全新原装假一赔十
VISHAY/威世
24+
NA
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
IR
25+
QFP
3200
全新原装、诚信经营、公司现货销售
IR
26+
TO-247
35890
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
24+
TO-220
20
IR
23+
TO-247
65400
IR/国际整流器
21+
TO-247
10000
只做原装,质量保证
IR
2450+
TO-247AC
8540
只做原装正品假一赔十为客户做到零风险!!
IR
2023+
TO-247
16240
全新原装正品,优势价格

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