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位置：首页 > IC中文资料第5574页 > IRF1010

IRF1010价格

参考价格：￥2.6922

型号：IRF1010EPBF 品牌：INTERNATIONAL 备注：这里有IRF1010多少钱，2025年最近7天走势，今日出价，今日竞价，IRF1010批发/采购报价，IRF1010行情走势销售排行榜，IRF1010报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF1010

N-Channel Power MOSFET

文件：632.22 Kbytes Page：7 Pages

NELLSEMI

尼尔半导体

IRF1010E

Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?

• Advanced Process Technology • Ultra Low On-Resistance • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex

IRF

IRF1010EL

Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A??

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

IRF

IRF1010ELPBF

HEXFET Power MOSFET

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

IRF

IRF1010EPBF

HEXFET짰 Power MOSFET

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

IRF

IRF1010ES

Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A??

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

IRF

IRF1010ESPBF

HEXFET Power MOSFET

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

IRF

IRF1010EZ

AUTOMOTIVE MOSFET

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi

IRF

IRF1010EZ

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=75A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

IRF1010EZL

AUTOMOTIVE MOSFET

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi

IRF

IRF1010EZLPBF

AUTOMOTIVE MOSFET

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi

IRF

IRF1010EZLPBF

Advanced Process Technology

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi

IRF

IRF1010EZPBF

AUTOMOTIVE MOSFET

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi

IRF

IRF1010EZPBF

Advanced Process Technology

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi

IRF

IRF1010EZS

AUTOMOTIVE MOSFET

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi

IRF

IRF1010EZS

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=75A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

IRF1010EZSPBF

Advanced Process Technology

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi

IRF

IRF1010EZSPBF

AUTOMOTIVE MOSFET

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi

IRF

IRF1010EZSTRLP

Advanced Process Technology

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi

IRF

IRF1010N

Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A??

VDSS = 55V RDS(on) = 11mΩ ID = 85A‡ Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig

IRF

IRF1010NL

Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A??

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRF1010NL

Fully Avalanche Rated

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inter

KERSEMI

IRF1010NLPBF

HEXFET짰 Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRF1010NPBF

HEXFET Power MOSFET

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

IRF

IRF1010NPBF

Advanced Process Technology Ultra Low On-Resistance

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

KERSEMI

IRF1010NS

Fully Avalanche Rated

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inter

KERSEMI

IRF1010NS

Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A??

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRF1010NSPBF

HEXFET짰 Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRF1010Z

AUTOMOTIVE MOSFET

AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating tempera ture, fast switc

IRF

IRF1010Z

N-Channel MOSFET Transistor

• DESCRITION • reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤7.5mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operati

ISC

无锡固电

IRF1010ZL

AUTOMOTIVE MOSFET

AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating tempera ture, fast switc

IRF

IRF1010ZS

AUTOMOTIVE MOSFET

AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating tempera ture, fast switc

IRF

IRF1010E

Ultra Low On-Resistance

文件：786.41 Kbytes Page：8 Pages

KERSEMI

IRF1010E

N-Channel MOSFET Transistor

文件：338.48 Kbytes Page：2 Pages

ISC

无锡固电

IRF1010EL

Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A⑦)

Infineon

英飞凌

IRF1010ELPBF

Advanced Process Technology

文件：227.87 Kbytes Page：11 Pages

IRF

IRF1010EPBF

Advanced Process Technology Ultra Low On-Resistance

文件：3.12153 Mbytes Page：8 Pages

KERSEMI

IRF1010ES

isc N-Channel MOSFET Transistor

文件：263.33 Kbytes Page：2 Pages

ISC

无锡固电

IRF1010ES

采用 D2-Pak 封装的 60V 单 N 通道功率 MOSFET

Infineon

英飞凌

IRF1010ESPBF

Advanced Process Technology

文件：227.87 Kbytes Page：11 Pages

IRF

IRF1010ESPBF_15

Advanced Process Technology

文件：227.87 Kbytes Page：11 Pages

IRF

IRF1010EZ

采用 TO-220 封装的 60V 单 N 沟道功率 MOSFET

Infineon

英飞凌

IRF1010EZ

N-Channel MOSFET Transistor

文件：338.8 Kbytes Page：2 Pages

ISC

无锡固电

IRF1010EZPBF

Advanced Process Technology

文件：413.46 Kbytes Page：12 Pages

IRF

IRF1010EZPBF_15

Advanced Process Technology

文件：413.46 Kbytes Page：12 Pages

IRF

IRF1010EZS

Isc N-Channel MOSFET Transistor

文件：299.58 Kbytes Page：2 Pages

ISC

无锡固电

IRF1010N

N-Channel MOSFET Transistor

文件：338.85 Kbytes Page：2 Pages

ISC

无锡固电

IRF1010NLPBF

Advanced Process Technology

文件：298.2 Kbytes Page：11 Pages

IRF

IRF1010NLPBF

Advanced Process Technology

文件：298.2 Kbytes Page：11 Pages

IRF

IRF1010NPBF

Advanced Process Technology

文件：231.48 Kbytes Page：8 Pages

IRF

IRF1010NPBF_15

Advanced Process Technology

文件：231.48 Kbytes Page：8 Pages

IRF

IRF1010NS

isc N-Channel MOSFET Transistor

文件：263.33 Kbytes Page：2 Pages

ISC

无锡固电

IRF1010NSPBF

Advanced Process Technology

文件：298.2 Kbytes Page：11 Pages

IRF

IRF1010NSPBF

Advanced Process Technology

文件：298.2 Kbytes Page：11 Pages

IRF

IRF1010NSPBF_15

Advanced Process Technology

文件：298.2 Kbytes Page：11 Pages

IRF

IRF1010NSTRRPBF

Advanced Process Technology

文件：298.2 Kbytes Page：11 Pages

IRF

IRF1010ZLPBF

HEXFET짰 Power MOSFET

文件：359.06 Kbytes Page：13 Pages

IRF

IRF1010ZLPBF

Advanced Process Technology

文件：404.91 Kbytes Page：12 Pages

IRF

IRF1010ZPBF

Advanced Process Technology

文件：404.91 Kbytes Page：12 Pages

IRF

IRF1010ZPBF

HEXFET짰 Power MOSFET

文件：359.06 Kbytes Page：13 Pages

IRF

IRF1010产品属性

  • 类型

    描述

  • 型号

    IRF1010

  • 功能描述

    TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 75A I(D) | TO-220AB

IRF1010供应商更多...

更新时间：2025-11-21 9:36:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市科芯源微电子有限公司
IRF1010E
IR
25+
TO220
54648
百分百原装现货 实单必成 欢迎询价
询价
北京京北通宇电子元件有限公司
IRF1010NPBF
INFINEON
24+
con
10
现货常备产品原装可到京北通宇商城查价格
询价
深圳市光格集成电路有限公司
IRF1010EPBF
INFINEON/IR
21+
TO-220-3
3000
15年光格 只做原装正品
询价
深圳市润联芯城科技有限公司
IRF1010NSTRLPBF
INFINEON/英飞凌
22+
TO-263
12500
原装正品支持实单
询价
上海专毅电子科技有限公司
IRF1010EPB
IR
17+
SMD
12000
只做全新进口原装,现货库存
询价
深圳市斌能达电子科技有限公司
IRF1010NSTRRPBF
Infineon/英飞凌
24+
D2PAK
6000
全新原装深圳仓库现货有单必成
询价
深圳市河锋鑫科技有限公司
IRF1010ZSTRLPBF
Infineon Technologies
22+
TO2633 D2Pak (2 Leads + Tab) T
9000
原厂渠道,现货配单
询价
贸泽芯城（深圳）电子科技有限公司
IRF1010NBPF
IR
23+
SOP8
4550
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价
深圳市益百分电子有限公司
IRF1010EPBF
IR
2012
TO-220
900000
全新原装进口自己库存优势
询价
深圳市星宇佳科技有限公司
IRF1010ESTRLPBF
IR
10+
TO-263
275
询价

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