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IRF1010E中文资料
IRF1010E数据手册规格书PDF详情
• Advanced Process Technology
• Ultra Low On-Resistance
• Dynamic dv/dt Rating
• 175°C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
Description
Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
IRF1010E产品属性
- 类型
描述
- 型号
IRF1010E
- 制造商
International Rectifier
- 功能描述
MOSFET N TO-220AB
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
13+ |
TO-220 |
50000 |
勤思达科技主营IR系列,全新原装正品,现货供应。 |
|||
IR |
新 |
进口原装 |
3000 |
库存现货 |
|||
IR |
24+ |
TO-220 |
20540 |
保证进口原装现货假一赔十 |
|||
IR |
25+ |
TO-220 |
9600 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
Infineon(英飞凌) |
24+ |
标准封装 |
12048 |
原厂渠道供应,大量现货,原型号开票。 |
|||
INFINEON/英飞凌 |
25+ |
TO-220 |
32000 |
INFINEON/英飞凌全新特价IRF1010E-PBF-CN即刻询购立享优惠#长期有货 |
|||
IR |
24+ |
TO-220 |
15000 |
全新原装的现货 |
|||
IR |
16+ |
TO-220 |
6066 |
全新原装/深圳现货库2 |
|||
IR |
23+ |
TO-220 |
65400 |
||||
INFINEON/英飞凌 |
24+ |
TO-220 |
18322 |
原装进口假一罚十 |
IRF1010EZSTRLP 价格
参考价格:¥6.2426
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