IRF1010EZS价格

参考价格:¥3.5335

型号:IRF1010EZSPBF 品牌:INTERNATIONAL 备注:这里有IRF1010EZS多少钱,2026年最近7天走势,今日出价,今日竞价,IRF1010EZS批发/采购报价,IRF1010EZS行情走势销售排行榜,IRF1010EZS报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF1010EZS

AUTOMOTIVE MOSFET

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi

IRF

IRF1010EZS

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=75A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

IRF1010EZS

60V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装

INFINEON

英飞凌

IRF1010EZS

Isc N-Channel MOSFET Transistor

文件:299.58 Kbytes Page:2 Pages

ISC

无锡固电

AUTOMOTIVE MOSFET

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi

IRF

Advanced Process Technology

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi

IRF

Advanced Process Technology

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi

IRF

Dead Blow Nylon Hammers

Die-cast one piece head and handle of aluminium alloy. Fitted with shock absorbent rubber grip. Screw-in faces of special nylon. The hollow head is partially filled with shot which adds to the weight and prevents re-bound. Allowing heavy and effective blows with maximum impact control.

THOR

1010 Pressure Gauge

FEATURES Solid-front case design for safety Wide selection of Bourdon tube materials and pressure ranges PLUS!™ Performance option to dampen vibration, shock and pulsation effects to provide a liquid-fill performance in a dry gauge

ASHCROFT

雅斯科

Colorful Square Tactile Button Switch Assortment - 15 pack

文件:107.37 Kbytes Page:1 Pages

ADAFRUIT

Voltage rating up to 3800V

文件:1.35889 Mbytes Page:5 Pages

NELLSEMI

尼尔半导体

Phase Control Thyristors

文件:1.3645 Mbytes Page:5 Pages

NELLSEMI

尼尔半导体

IRF1010EZS产品属性

  • 类型

    描述

  • 型号

    IRF1010EZS

  • 功能描述

    MOSFET N-CH 60V 75A D2PAK

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2026-1-28 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Infineon(英飞凌)
24+
标准封装
12048
原厂渠道供应,大量现货,原型号开票。
VBsemi
21+
TO263
10065
一级代理,专注军工、汽车、医疗、工业、新能源、电力
Infineon(英飞凌)
25+
D2PAK
21000
原装正品现货,原厂订货,可支持含税原型号开票。
VBsemi/台湾微碧
25+
DPAK
30000
代理全新原装现货,价格优势
INFINE0N
21+
D2PAK (TO-263)
32568
100%进口原装!长期供应!绝对优势价格(诚信经营
IR
22+
D2-PAK
8000
原装正品支持实单
IR
2023+
D2-PAK
50000
原装现货
IR
24+
D2-Pak
8866
INFINEON/英飞凌
2450+
TO-263
9850
只做原装正品现货或订货假一赔十!
IR
22+
D2-PAK
9450
原装正品,实单请联系

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