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IRF1010EZSTRLP中文资料
IRF1010EZSTRLP数据手册规格书PDF详情
Description
This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free
IRF1010EZSTRLP产品属性
- 类型
描述
- 型号
IRF1010EZSTRLP
- 功能描述
MOSFET MOSFT 60V 84A 8.5mOhm 58nC
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
25+ |
TO263 |
20300 |
IR原装特价IRF1010EZSTRLPBF即刻询购立享优惠#长期有货 |
|||
IR |
SOT-263 |
30216 |
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S |
||||
INFINEON/英飞凌 |
24+ |
TO-263 |
5600 |
只做原厂渠道 可追溯货源 |
|||
IR |
2021+ |
TO-263 |
9000 |
原装现货,随时欢迎询价 |
|||
Infineon(英飞凌) |
24+ |
TO-263-3 |
8357 |
支持大陆交货,美金交易。原装现货库存。 |
|||
INFINEON |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
INFINEON/英飞凌 |
2450+ |
TO-263 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
IR |
24+ |
TO-263 |
7500 |
||||
Infineon |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
IR |
23+ |
TO-263 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
IRF1010EZSTRLP 价格
参考价格：￥6.2426
IRF1010EZSTRLP 资料下载更多...
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