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位置：首页 > IC中文资料第456页 > IRF1010N

IRF1010N价格

参考价格：￥2.5912

型号：IRF1010NPBF 品牌：International 备注：这里有IRF1010N多少钱，2025年最近7天走势，今日出价，今日竞价，IRF1010N批发/采购报价，IRF1010N行情走势销售排行榜，IRF1010N报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF1010N

Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A??

VDSS = 55V RDS(on) = 11mΩ ID = 85A‡ Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig

IRF

IRF1010N

N-Channel MOSFET Transistor

文件：338.85 Kbytes Page：2 Pages

ISC

无锡固电

IRF1010N

55V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装

Infineon

英飞凌

IRF1010NL

Fully Avalanche Rated

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inter

KERSEMI

IRF1010NL

Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A??

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRF1010NLPBF

HEXFET짰 Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRF1010NPBF

Advanced Process Technology Ultra Low On-Resistance

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

KERSEMI

IRF1010NPBF

HEXFET Power MOSFET

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

IRF

IRF1010NS

Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A??

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRF1010NS

Fully Avalanche Rated

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inter

KERSEMI

IRF1010NSPBF

HEXFET짰 Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRF1010NLPBF

Advanced Process Technology

文件：298.2 Kbytes Page：11 Pages

IRF

IRF1010NLPBF

Advanced Process Technology

文件：298.2 Kbytes Page：11 Pages

IRF

IRF1010NLPBF

Advanced Process Technology

Infineon

英飞凌

IRF1010NPBF

Advanced Process Technology

文件：231.48 Kbytes Page：8 Pages

IRF

IRF1010NPBF_15

Advanced Process Technology

文件：231.48 Kbytes Page：8 Pages

IRF

IRF1010NS

55V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装

Infineon

英飞凌

IRF1010NS

isc N-Channel MOSFET Transistor

文件：263.33 Kbytes Page：2 Pages

ISC

无锡固电

IRF1010NSPBF

Advanced Process Technology

文件：298.2 Kbytes Page：11 Pages

IRF

IRF1010NSPBF

Advanced Process Technology

文件：298.2 Kbytes Page：11 Pages

IRF

IRF1010NSPBF_15

Advanced Process Technology

文件：298.2 Kbytes Page：11 Pages

IRF

IRF1010NSTRRPBF

Advanced Process Technology

文件：298.2 Kbytes Page：11 Pages

IRF

1010

Dead Blow Nylon Hammers

Die-cast one piece head and handle of aluminium alloy. Fitted with shock absorbent rubber grip. Screw-in faces of special nylon. The hollow head is partially filled with shot which adds to the weight and prevents re-bound. Allowing heavy and effective blows with maximum impact control.

THOR

1010

1010 Pressure Gauge

FEATURES Solid-front case design for safety Wide selection of Bourdon tube materials and pressure ranges PLUS!™ Performance option to dampen vibration, shock and pulsation effects to provide a liquid-fill performance in a dry gauge

ASHCROFT

雅斯科

1010

Colorful Square Tactile Button Switch Assortment - 15 pack

文件：107.37 Kbytes Page：1 Pages

Adafruit

1010PT

Voltage rating up to 3800V

文件：1.35889 Mbytes Page：5 Pages

NELLSEMI

尼尔半导体

1010PTDO

Phase Control Thyristors

文件：1.3645 Mbytes Page：5 Pages

NELLSEMI

尼尔半导体

IRF1010N产品属性

  • 类型

    描述

  • 型号

    IRF1010N

  • 功能描述

    MOSFET MOSFET, 55V, 72A, 11 mOhm, 80 nC Qg, TO-220AB

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS（导通）

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

IRF1010N供应商更多...

更新时间：2025-11-21 12:39:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市柯尔基电子有限公司
IRF1010NPBF
IR
23+24
TO-220
29840
主营MOS管,二极.三极管,肖特基二极管.功率三极管
询价
深圳市盈慧通电子有限公司
IRF1010NS
INFINEON/英飞凌
2511
TO263-3
360000
电子元器件采购降本30%!原厂直采,砍掉中间差价
询价
上海意淼电子科技有限公司
IRF1010NL
IR
23+
TO-220
12000
全新原装假一赔十
询价
深圳市华来深电子有限公司
IRF1010NSTRRPBF
IR
23+
TO-263
11846
一级代理商现货批发,原装正品,假一罚十
询价
深圳市能元时代电子有限公司
IRF1010N
IR
23+
TO-220
12800
##公司主营品牌长期供应100%原装现货可含税提供技术
询价
中天科工半导体（深圳）有限公司
IRF1010NPBF
INFINEON/英飞凌
25+
TO-220
20300
INFINEON/英飞凌原装特价IRF1010NPBF即刻询购立享优惠#长期有货
询价
深圳市润联芯城科技有限公司
IRF1010NSTRLPBF
INFINEON/英飞凌
22+
TO-263
12500
原装正品支持实单
询价
深圳市中联芯电子有限公司
IRF1010NSTRLPBF
INFINEON/英飞凌
23+
TO263
10065
原装正品,有挂有货,假一赔十
询价
深圳市天芯威科技有限公司
IRF1010NPBF
INFINEON
24+
n/a
25836
新到现货,只做原装进口
询价
深圳市宏世佳电子科技有限公司
IRF1010N
IR
2025+
TO-220
5185
全新原厂原装产品、公司现货销售
询价

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IRF1010N规格书下载地址

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