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IRF1010N中文资料
IRF1010N数据手册规格书PDF详情
VDSS = 55V
RDS(on) = 11mΩ
ID = 85A
Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
IRF1010N产品属性
- 类型
描述
- 型号
IRF1010N
- 功能描述
MOSFET MOSFET, 55V, 72A, 11 mOhm, 80 nC Qg, TO-220AB
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
TO-220 |
7510 |
专业分销全系列产品!绝对原装正品!量大可订!价格优 |
||||
INFINEON/英飞凌 |
25+ |
TO-220 |
20300 |
INFINEON/英飞凌原装特价IRF1010NPBF即刻询购立享优惠#长期有货 |
|||
IR |
15+ |
原厂原装 |
8700 |
进口原装现货假一赔十 |
|||
IR/VISHAY |
SOT-263 |
30216 |
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S |
||||
IR |
23+ |
TO-220 |
65400 |
||||
IR |
24+ |
D2-PAK |
4000 |
只做原厂渠道 可追溯货源 |
|||
INFINEON/IR |
13+ |
1600 |
TO-263-3 (D2PAK) |
||||
IR |
22+ |
TO-262 |
9450 |
原装正品，实单请联系 |
|||
IR |
17+ |
D2-Pak |
31518 |
原装正品 可含税交易 |
|||
IR |
2021+ |
TO-126 |
6800 |
原厂原装,欢迎咨询 |
IRF1010NSTRLPBF 价格
参考价格：￥2.4902
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