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位置：首页 > IC中文资料第322页 > IRF1010EZ

IRF1010EZ价格

参考价格：￥5.3421

型号：IRF1010EZLPBF 品牌：International 备注：这里有IRF1010EZ多少钱，2026年最近7天走势，今日出价，今日竞价，IRF1010EZ批发/采购报价，IRF1010EZ行情走势销售排行榜，IRF1010EZ报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF1010EZ

AUTOMOTIVE MOSFET

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi

IRF

IRF1010EZ

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=75A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

IRF1010EZ

采用 TO-220 封装的 60V 单 N 沟道功率 MOSFET

INFINEON

英飞凌

IRF1010EZ

N-Channel MOSFET Transistor

文件：338.8 Kbytes Page：2 Pages

ISC

无锡固电

IRF1010EZL

AUTOMOTIVE MOSFET

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi

IRF

IRF1010EZLPBF

AUTOMOTIVE MOSFET

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi

IRF

IRF1010EZLPBF

Advanced Process Technology

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi

IRF

IRF1010EZPBF

AUTOMOTIVE MOSFET

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi

IRF

IRF1010EZPBF

Advanced Process Technology

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi

IRF

IRF1010EZS

AUTOMOTIVE MOSFET

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi

IRF

IRF1010EZS

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=75A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

IRF1010EZSPBF

Advanced Process Technology

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi

IRF

IRF1010EZSPBF

AUTOMOTIVE MOSFET

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi

IRF

IRF1010EZSTRLP

Advanced Process Technology

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi

IRF

IRF1010EZLPBF

Advanced Process Technology

INFINEON

英飞凌

IRF1010EZPBF

Advanced Process Technology

文件：413.46 Kbytes Page：12 Pages

IRF

IRF1010EZPBF_15

Advanced Process Technology

文件：413.46 Kbytes Page：12 Pages

IRF

IRF1010EZS

Isc N-Channel MOSFET Transistor

文件：299.58 Kbytes Page：2 Pages

ISC

无锡固电

IRF1010EZS

60V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装

INFINEON

英飞凌

1010

1010 Pressure Gauge

FEATURES Solid-front case design for safety Wide selection of Bourdon tube materials and pressure ranges PLUS!™ Performance option to dampen vibration, shock and pulsation effects to provide a liquid-fill performance in a dry gauge

ASHCROFT

雅斯科

1010

Dead Blow Nylon Hammers

Die-cast one piece head and handle of aluminium alloy. Fitted with shock absorbent rubber grip. Screw-in faces of special nylon. The hollow head is partially filled with shot which adds to the weight and prevents re-bound. Allowing heavy and effective blows with maximum impact control.

THOR

1010

Colorful Square Tactile Button Switch Assortment - 15 pack

文件：107.37 Kbytes Page：1 Pages

ADAFRUIT

1010PT

Voltage rating up to 3800V

文件：1.35889 Mbytes Page：5 Pages

NELLSEMI

尼尔半导体

1010PTDO

Phase Control Thyristors

文件：1.3645 Mbytes Page：5 Pages

NELLSEMI

尼尔半导体

IRF1010EZ产品属性

  • 类型

    描述

  • 型号

    IRF1010EZ

  • 功能描述

    MOSFET N-CH 60V 75A TO-220AB

  • RoHS

    否

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • 型

    MOSFET N 通道，金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds（最大）@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A，10V Id 时的

  • Vgs(th)（最大）

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

IRF1010EZ供应商更多...

更新时间：2026-1-27 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市高捷芯城科技有限公司
IRF1010EZSPBF
Infineon(英飞凌)
24+
标准封装
12048
原厂渠道供应,大量现货,原型号开票。
询价
深圳市星辰微电科技有限公司
IRF1010EZ
Infineon
25+
TO220
15500
英飞凌优势渠道全系列在售
询价
谛辉(北京/上海/青岛 )电子科技有限公司
IRF1010EZ
IR
25+
QFN
18000
原厂直接发货进口原装
询价
深圳市科恒伟业电子有限公司
IRF1010EZPBF
IR
2450+
TO-220
9850
只做原装正品现货或订货假一赔十!
询价
深圳市得捷芯城科技有限公司
IRF1010EZSTRLP
Infineon(英飞凌)
25+
D2PAK
21000
原装正品现货,原厂订货,可支持含税原型号开票。
询价
深圳市华斯顿科技有限公司
IRF1010EZ
IOR
25+23+
TO-220
37912
绝对原装正品现货,全新深圳原装进口现货
询价
深圳市一线半导体有限公司
IRF1010EZ
IR
24+
TO-220AB
8866
询价
深圳市美思瑞电子科技有限公司
IRF1010EZS
IR
22+
D2-PAK
9450
原装正品，实单请联系
询价
深圳市中联芯电子有限公司
IRF1010EZ
IR
24+
TO-220
9000
只做原装正品 有挂有货 假一赔十
询价
上海金庆电子技术有限公司
IRF1010EZ
INFINEON
10+
TO-220
50
询价

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