型号 功能描述 生产厂家 企业 LOGO 操作
IRF1010NL

Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A??

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRF1010NL

Fully Avalanche Rated

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inter

KERSEMI

HEXFET짰 Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

Advanced Process Technology

文件:298.2 Kbytes Page:11 Pages

IRF

Advanced Process Technology

文件:298.2 Kbytes Page:11 Pages

IRF

Advanced Process Technology

Infineon

英飞凌

Dead Blow Nylon Hammers

Die-cast one piece head and handle of aluminium alloy. Fitted with shock absorbent rubber grip. Screw-in faces of special nylon. The hollow head is partially filled with shot which adds to the weight and prevents re-bound. Allowing heavy and effective blows with maximum impact control.

THOR

1010 Pressure Gauge

FEATURES Solid-front case design for safety Wide selection of Bourdon tube materials and pressure ranges PLUS!™ Performance option to dampen vibration, shock and pulsation effects to provide a liquid-fill performance in a dry gauge

ASHCROFT

雅斯科

Colorful Square Tactile Button Switch Assortment - 15 pack

文件:107.37 Kbytes Page:1 Pages

Adafruit

Voltage rating up to 3800V

文件:1.35889 Mbytes Page:5 Pages

NELLSEMI

尼尔半导体

Phase Control Thyristors

文件:1.3645 Mbytes Page:5 Pages

NELLSEMI

尼尔半导体

IRF1010NL产品属性

  • 类型

    描述

  • 型号

    IRF1010NL

  • 功能描述

    MOSFET N-CH 55V 85A TO-262

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2025-11-21 11:23:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
22+
TO-262
9450
原装正品,实单请联系
IR
25+23+
TO-220
27273
绝对原装正品全新进口深圳现货
IR
23+
TO-262
43000
原厂授权一级代理,专业海外优势订货,价格优势、品种
IR
23+
TO-262
48473
##公司主营品牌长期供应100%原装现货可含税提供技术
Infineon Technologies
23+
原装
8000
只做原装现货
INFINOEN
24+
TO-220
90000
一级代理进口原装现货、假一罚十价格合理
IR
2023+
TO-262
3000
进口原装现货
IR
24+
TO-262
8866
IR
23+
TO-262-3
11846
一级代理商现货批发,原装正品,假一罚十
IR
23+
TO-220
12000
全新原装假一赔十

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