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型号 功能描述 生产厂家 企业 LOGO 操作
IRF1010NL

Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A??

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRF1010NL

Fully Avalanche Rated

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inter

KERSEMI

HEXFET짰 Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

Advanced Process Technology

文件:298.2 Kbytes Page:11 Pages

IRF

Advanced Process Technology

文件:298.2 Kbytes Page:11 Pages

IRF

Advanced Process Technology

INFINEON

英飞凌

1.0 AMPERE SILICON MINIATURE SINGLE- PHASE BRIDGES(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Amperes)

VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Amperes FEATURES • Ratings to 1000V PRV • Surge overload rating: 30 Amperes peak • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique • Mounting position:Any

PANJIT

強茂

DUAL-IN-LINE GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes)

VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes FEATURES ● Plastic material used carries Underwriters Laboratory recognition 94V-O ● Low leakage ● Surge overload rating— 30~50 amperes peak ● Ideal for printed circuit board ● Exceeds environmental standards of MIL-S-19500/228

PANJIT

強茂

FAST SWITCHING PLASTIC DIODES(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Ampere)

VOLTAGE 50 to 1000 Volts CURRENT 1.0 Amperes FEATURES • High current capability. • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Low leakage. • Exceeds environmental standards of MIL-S-

PANJIT

強茂

ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Ampere)

ULTRAFAST RECOVERY RECTIFIER VOLTAGE 50 to 1000 Volts CURRENT 1.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound • Exceeds environmental standards of MIL-S-19500/228. • Ultra Fast switchin

PANJIT

強茂

GaAs N-Channel MES IC

文件:39.03 Kbytes Page:2 Pages

PANASONIC

松下

IRF1010NL产品属性

  • 类型

    描述

  • 型号

    IRF1010NL

  • 功能描述

    MOSFET N-CH 55V 85A TO-262

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2026-8-1 14:55:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
26+
TO-262
35890
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
IR
24+
TO-262-3
185
Infineon Technologies
22+
TO2623 Long Leads I2Pak TO262A
9000
原厂渠道,现货配单
IR
23+
TO-262
48473
##公司主营品牌长期供应100%原装现货可含税提供技术
IR
2223+
TO-126
26800
只做原装正品假一赔十为客户做到零风险
IR
2021+
TO-126
6800
原厂原装,欢迎咨询
IR
26+
TO-126
6893
专注全新正品,优势现货供应
IR
23+
TO-262-3
11846
一级代理商现货批发,原装正品,假一罚十
IR
23+
TO-262
43000
原厂授权一级代理,专业海外优势订货,价格优势、品种
Infineon Technologies
23+
原装
8000
只做原装现货

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