Dual N-Channel , Digital FET

General Description These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed espec

Dual N-Channel , Digital FET

General Description These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed espec

Digital FET, Dual P-Channel

General Description These Dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especi

Digital FET, Dual N-Channel

General Description These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especi

Digital FET, Dual N-Channel

General Description These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especi

Digital FET, Dual P-Channel

General Description These P-Channel enhancement mode field effect transistor are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially f

Dual P-Channel 20V (D-S) MOSFET

Features Vos =-20V,lp = -3A Ros(on) =120m Q @ Ves=-2.5V (Typ) Roson) =85m Q @ Ves=-4.5V (Typ) High Power and current handing capability Lead free product is acquired Surface Mount Package

Dual P-Channel 2.5V Specified PowerTrench??MOSFET

General Description These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been desig

Dual P-Channel 2.5V Specified PowerTrench??MOSFET

Dual P-Channel 2.5V Specified PowerTrench™ MOSFET

Dual P-Channel 20V (D-S) MOSFET

Features Vps =-20V,Ip =-3A Rosion) =120m Q @ Ves=-2.5V (Typ) Rosion) =85m Q @ Ves=-4.5V (Typ) High Power and current handing capability Lead free product is acquired Surface Mount Package

Dual P-Channel 2.5V Specified PowerTrench MOSFET

General Description These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been desig

Dual P-Channel 20V (D-S) MOSFET

Features Vps =-20V,Ip =-3A Roson) =120m Q @ Ves=-2.5V (Typ) Ros(on) =85m Q @ Ves=-4.5V (Typ) High Power and current handing capability Lead free product is acquired Surface Mount Package

Dual P-Channel 1.8V PowerTrench Specified MOSFET

General Description These P-Channel 1.8V specified MOSFETs are produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. Features • –2.3 A, –20 V.

Dual P-Channel 20V (D-S) MOSFET

Features Vps =-20V,Ip =-3A Ros(on) =120m Q @ Ves=-2.5V (Typ) Ros(on) =85m Q @ Ves=-4.5V (Typ) High Power and current handing capability Lead free product is acquired Surface Mount Package

Dual P-Channel 20V (D-S) MOSFET

Features Vps =-20V,Ip =-3A Ros(on) =120m Q @ Ves=-2.5V (Typ) Rosion) =85m Q @ Ves=-4.5V (Typ) High Power and current handing capability Lead free product is acquired Surface Mount Package

Dual N & P Channel , Digital FET

General Description These dual N & P Channel logic level enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designe

Integrated Load Switch

General Description These Integrated Load Switches are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited

Integrated Load Switch

General Description These Integrated Load Switches are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited

Integrated Load Switch

General Description These Integrated Load Switches are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited

Load Switch with Level-Shift

Product Summary ● -2.3A,-8V ● RDS(ON)-55m2 @ VGS=4.5V(Typ) ● RDS(ON)=65m2 @ VGS=2.5V(Typ) ● FDC6331L Pin to Pin fully compatible

Integrated Load Switch

General Description This device is particularly suited for compact power management in portable electronic equipment where 2.5V to 8V input and 1.8A output current capability are needed. This load switch integrates a small N-Channel power MOSFET (Q1) which drives a large P-Channel power MOSFET (Q

Integrated Load Switch

General Description This device is particularly suited for compact power management in portable electronic equipment where 2.5V to 8V input and 1.8A output current capability are needed. This load switch integrates a small N-Channel power MOSFET (Q1) which drives a large P-Channel power MOSFET (Q

Integrated Load Switch

General Description This device is particularly suited for compact power management in portable electronic equipment where 3V to 20V input and 1.8A output current capability are needed. This load switch integrates a small N-Channel power MOSFET (Q1) which drives a large P-Channel power MOSFET (Q2

Integrated Load Switch

General Description This device is particularly suited for compact power management in portable electronic equipment where 3V to 20V input and 1.8A output current capability are needed. This load switch integrates a small N-Channel power MOSFET (Q1) which drives a large P-Channel power MOSFET (Q2

Integrated Load Switch

General Description This device is particularly suited for compact power management in portable electronic equipment where 2.5V to 8V input and 2.5A output current capability are needed. This load switch integrates a small N-Channel power MOSFET (Q1) which drives a large P-Channel power MOSFET (Q

Integrated Load Switch

General Description This device is particularly suited for compact power management in portable electronic equipment where 2.5V to 8V input and 2.5A output current capability are needed. This load switch integrates a small N-Channel power MOSFET (Q1) which drives a large P-Channel power MOSFET (Q

Load Switch with Level-Shift

Product Summary * -2.6A,-8V * RDS(ON)-50m2 @ VGS=4.5V(Typ) * RDS(ON)=75m2 @ VGS=2.5V(Typ) *FDC6331L Pin to Pin fully compatible

Integrated Load Switch

General Description This device is particularly suited for compact power management in portable electronic equipment where 3V to 20V input and 2.3A output current capability are needed. This load switch integrates a small N-Channel power MOSFET (Q1) which drives a large P-Channel power MOSFET (

Integrated Load Switch

General Description This device is particularly suited for compact power management in portable electronic equipment where 3V to 20V input and 2.3A output current capability are needed. This load switch integrates a small N-Channel power MOSFET (Q1) which drives a large P-Channel power MOSFET (

Integrated Load Switch

General Description This device is particularly suited for compact power management in portable electronic equipment where 2.5V to 8V input and 2.8A output current capability are needed. This load switch integrates a small N-Channel power MOSFET (Q1) that drives a large P-Channel power MOSFET (Q2

Integrated Load Switch

General Description This device is particularly suited for compact power management in portable electronic equipment where 2.5V to 8V input and 2.8A output current capability are needed. This load switch integrates a small N-Channel power MOSFET (Q1) that drives a large P-Channel power MOSFET (Q2

Load Switch with Level-Shift

Product Summary * -2.8A,-8V * RDS(ON)=45m2 @ VGS=4.5V(Typ) * RDS(ON)=50m2 @ VGS=2.5V(Typ) * RDS(ON)-80m 2 @ VGS=1.8V(Typ) * FDC6331L Pin to Pin fully compatible

Common Source Load Switch P-Channel 1.8V Specified PowerTrench MOSFET

General Description This Load Switch integrates an N-Channel Power MOSFET that drives Common-Source P-Channels and in a small SuperSotTM–6 package. It uses Fairchild’s advanced low voltage PowerTrench process. The RDS(ON) is 750 mΩ per the switch @ VGS 1.8Vand is optimized for battery power manag

30V N & P-Channel PowerTrench MOSFETs

General Description These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Features · Q12.5 A, 30V. RDS(ON)= 95 mW@ VGS

N-Channel Enhancement Mode Field Effect Transistor

General Description This N-Channel enhancement mode power field effect transistors is produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance. These devices are particularly suited for low voltage applic

P-Channel Enhancement Mode Field Effect Transistor

General Description These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit

P-Channel Enhancement Mode Field Effect Transistor

General Description These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit

P-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit

Single N-Channel, 2.5V Specified PowerTrenchTM MOSFET

General Description This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed

N-Channel 2.5V Specified PowerTrench® MOSFET 20V, 6.2A, 24mΩ

Features Max rDS(on) = 24mΩ at VGS = 4.5V, ID = 6.2A Max rDS(on) = 32mΩ at VGS = 2.5V, ID = 5.2A Fast switching speed Low gate charge (8nC typical) High performance trench technology for extremely low rDS(on) SuperSOT™–6 package: small footprint (72% smaller than standard SO-8; low

P-Channel 2.5V Specified PowerTrenchTM MOSFET

General Description This P -Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance These devices are well sui

P-Channel 2.5V PowerTrench Specified MOSFET -20V, -4.5A, 43mohm

General Description This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance These devices are well

P-Channel 2.5V Specified PowerTrenchTM MOSFET

General Description This P -Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance These devices are well sui

20V Integrated P-Channel PowerTrench MOSFET and Schottky Diode

General Description The FDC6392S combines the exceptional performance of Fairchilds PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SSOT-6 package. This device is designed specifically as a single package solution for DC to DC converters. It fe

Dual N-Channel , Digital FET

双 N 沟道，数字 FET，25V，0.22A，4Ω

Dual N-Channel , Digital FET

文件：374.3 Kbytes Page：5 Pages

Dual N-Channel , Digital FET

文件：374.3 Kbytes Page：5 Pages

Dual N-Channel Enhancement Mode MOSFET

文件：870.8 Kbytes Page：3 Pages

双 P 沟道，数字 FET，-25V，-0.12A，10Ω

Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET

文件：246.26 Kbytes Page：8 Pages

Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET

文件：246.26 Kbytes Page：8 Pages

Dual N-Channel 20 V (D-S) MOSFET

文件：1.94875 Mbytes Page：9 Pages

Dual P-Channel 20 V (D-S) MOSFET

文件：1.94721 Mbytes Page：9 Pages

Dual P-Channel 20 V (D-S) MOSFET

文件：1.08644 Mbytes Page：9 Pages

Dual P-Channel 1.8V PowerTrench Specified MOSFET

文件：165.22 Kbytes Page：5 Pages

Dual P-Channel 1.8V PowerTrench Specified MOSFET

文件：165.22 Kbytes Page：5 Pages

Dual N & P Channel , Digital FET

文件：100.13 Kbytes Page：7 Pages

Dual N & P Channel , Digital FET

文件：100.13 Kbytes Page：7 Pages

N- and P-Channel V (D-S) MOSFET

文件：1.13152 Mbytes Page：10 Pages