Dual P-Channel 2.5V Specified PowerTrench??MOSFET

General Description These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been desig

丝印代码：312F；Dual P-Channel 20V (D-S) MOSFET

Features Vos =-20V,lp = -3A Ros(on) =120m Q @ Ves=-2.5V (Typ) Roson) =85m Q @ Ves=-4.5V (Typ) High Power and current handing capability Lead free product is acquired Surface Mount Package

双 P 沟道，PowerTrench® MOSFET，2.5V 指定，-20V，-1.9A，170mΩ

这些P沟道2.5V额定MOSFET采用飞兆半导体先进的PowerTrench工艺生产，这一先进工艺是专为最大程度地降低通态电阻并保持低栅极电荷以获得卓越开关性能而定制的。 这些器件经过专门设计，能以极小的尺寸提供出色的功耗，非常适合那些不宜采用更大更昂贵的SO-8和TSSOP-8封装的应用。 •-1.9 A，-20 V\n•RDS(on) = 0.170 Ω @ VGS = -4.5 V\n•RDS(on) = 0.250 Ω @ VGS = -2.5 V\n•低栅极电荷（典型值2.3nC）\n•快速开关速度\n•高性能沟道技术可实现极低的RDS(ON)\n•SuperSOT™-6封装： 小尺寸（比标准SO-8小72%）；薄型（1mm厚）;

Dual P-Channel 20 V (D-S) MOSFET

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VTR Recording Video Signal Processing Circuit

Features ● The functions consist of : Video AGC circuit Pre-emphasis circuit Dynamic-emphasis circuit White/Dark clip FM modulator ● Supply voltage : 5 V

VERY LOW-COST VOICE SYNTHESIZER WITH 4-BIT MICROPROCESSOR

General Description The ASM5206C is very low cost voice synthesizer with 4-bit microprocessor. It has various features including 4-bit ALU, ROM, RAM,I/O ports, timers, clock generator, watchdog timer(WDT), voice synthesizer, etc. It consists of 22 instructions in the device. With CMOS technolog

P-Channel 2.5V Specified PowerTrench MOSFET

General Description This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Features –0.6 A, –20 V. Rds(on)= 420 mΩ@ VGS= –4.5 V

3 AMP HIGH-PERFORMANCE ADJUSTABLE ISR

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