General Description

These P-Channel 1.8V specified MOSFETs are produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

Features

• –2.3 A, –20 V.

RDS(ON) = 115 mΩ @ VGS = –4.5 V

RDS(ON) = 155 mΩ @ VGS = –2.5 V

RDS(ON) = 225 mΩ @ VGS = –1.8 V

• High performance trench technology for extremely low RDS(ON)

• SuperSOTTM-6 package: small footprint (72 smaller than standard SO-8); low profile (1mm thick)