双 N 沟道，PowerTrench® MOSFET，2.5V 指定，20V，2.7A，80mΩ

这些N沟道低阈值2.5V额定MOSFET采用飞兆半导体先进的PowerTrench工艺生产，这一先进工艺是专为最大限度地降低通态电阻并保持低栅极电荷以获得卓越开关性能而定制的。 •2.7 A, 20 V\n•RDS(on) = 0.08Ω @ VGS = 4.5 V\n•RDS(on) = 0.12Ω @ VGS = 2.5V\n•低栅极电荷（3.5nC，典型值）\n•快速开关速度\n•高性能沟道技术可实现极低的RDS(ON)\n•SuperSOT™ -6封装： 小尺寸（比标准SO-8小72%）；薄型（1mm厚）;

丝印代码：305；Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET

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Dual N-Channel 20 V (D-S) MOSFET

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Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET

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SUBMINIATURE T-3/4 LED DIFFUSED and CLEAR LAMPS

DESCRIPTION These T-3/4 subminiature LED lamps feature a square base, transfer molded package for surface mount applications. A tinted diffused or water clear epoxy lens — available in AIGaAs red, high-efficiency red, green, and yellow — produces wide-angle beam emission and sharp on/off contrast

Ultrahigh-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive.

The best light source is supported by the best electrode technology

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3 AMP HIGH-PERFORMANCE ADJUSTABLE ISR

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