General Description

These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

Features

● –2.2 A, –20 V.

RDS(ON) = 125 mW @ VGS = –4.5 V

RDS(ON) = 190 mW @ VGS = –2.5 V

● Low gate charge

● Fast switching speed

● High performance trench technology for extremely low RDS(ON)

● SuperSOT TM -6 package: small footprint 72

smaller than standard SO-8); low profile (1mm thick)

Applications

● Load switch

● Battery protection

● Power management