Single N-Channel, 2.5V Specified PowerTrenchTM MOSFET

General Description This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed

N 沟道，PowerTrench® MOSFET，2.5V 指定，20V，6.2A，24mΩ

此N沟道2.5V额定MOSFET采用飞兆半导体先进的PowerTrench工艺生产，这一先进工艺是专为最大限度地降低通态电阻并保持低栅极电荷以获得卓越开关性能而定制的。 与SO-8和TSSOP-8封装的大尺寸不同，这些器件经过专门设计，能以非常小的尺寸提供出色的功耗特性。 •6.2 A，20 V。 RDS(on) = 0.024 Ω @ VGS = 4.5 V, RDS(on) = 0.032 Ω @ VGS = 2.5 V\n•快速开关速度。\n•低栅极电荷（10.5nC，典型值）。\n•高性能沟道技术可实现极低的RDS(ON)。\n•SuperSOT™ -6封装： 小尺寸（比标准SO-8小72%）；薄型（1mm厚）。;

N-Channel 30 V (D-S) MOSFET

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High Precision, Wide-Band RMS-to-DC Converter

PRODUCT DESCRIPTION The AD637 is a complete high accuracy monolithic rms-to-dc converter that computes the true rms value of any complex waveform. It offers performance that is unprecedented in integrated circuit rms-to-dc converters and comparable to discrete and modular techniques in accuracy,

NPN medium power transistors

DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complements: BC636, BC638 and BC640. FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Driver stages of audio/video amplifiers.

High Current Transistors

High Current Transistors NPN Silicon

NPN Silicon AF Transistors (High current gain High collector current)

NPN Silicon AF Transistors ● High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BC 636, BC 638, BC 640 (PNP)

WIDEBAND, FET-INPUT OPERATIONAL AMPLIFIER

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