General Description

These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

Features

• -1.9 A, -20 V.

RDS(on) = 0.170 Ω @ VGS = -4.5 V

RDS(on) = 0.250Ω @ VGS = -2.5 V

• Low gate charge (3 nC typical).

• Fast switching speed.

• High performance trench technology for extremely low RDS(ON).

• SuperSOTTM-6 package: small footprint (72 smaller

than standard SO-8); low profile (1mm thick).

Applications

• Load switch

• Battery protection

• Power management