Dual P-Channel 2.5V Specified PowerTrench MOSFET

General Description These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been desig

丝印代码：312F；Dual P-Channel 20V (D-S) MOSFET

Features Vps =-20V,Ip =-3A Roson) =120m Q @ Ves=-2.5V (Typ) Ros(on) =85m Q @ Ves=-4.5V (Typ) High Power and current handing capability Lead free product is acquired Surface Mount Package

双 P 沟道 PowerTrench® MOSFET，2.5V 指定，-20V，-2.2A，125mΩ

这些P沟道2.5V额定MOSFET采用飞兆半导体先进的PowerTrench工艺生产，这一先进工艺是专为最大程度地降低通态电阻并保持低栅极电荷以获得卓越开关性能而定制的。 这些器件经过专门设计，能在极小的空间内实现优异的功率耗散，非常适合那些不宜采用更大更昂贵的SO-8和TSSOP-8封装的应用。 •-2.2 A，-20 V\n•VGS = -4.5 V时，RDS(on) = 125m Ω\n•VGS = -2.5 V时，RDS(on) = 190m Ω\n•低栅极电荷 \n•快速开关速度\n•高性能沟道技术可实现极低的RDS(ON)\n•SuperSOT™ -6封装： 小尺寸（比标准SO-8小72%）；薄型（1mm厚）;

P+P 20V MOSFET

5-Pin, Multiple-Input, Programmable Reset ICs

General Description The MAX6305–MAX6313 CMOS microprocessor (µP) supervisory circuits are designed to monitor more than one power supply. Ideal for monitoring both 5V and 3.3V in personal computer systems, these devices assert a system reset if any of the monitored supplies falls outside the prog

0.54 INCH (13.7MM) 14 SEGMENT, DUAL DIGIT ALPHA-NUMERIC STICK DISPLAY

The best light source is supported by the best electrode technology

文件：1.12019 Mbytes Page：7 Pages

DOUBLE-BALANCED MIXER

文件：123.85 Kbytes Page：2 Pages

DOUBLE-BALANCED MIXER

文件：123.85 Kbytes Page：2 Pages