Features

Max rDS(on) = 24mΩ at VGS = 4.5V, ID = 6.2A

Max rDS(on) = 32mΩ at VGS = 2.5V, ID = 5.2A

Fast switching speed

Low gate charge (8nC typical)

High performance trench technology for extremely low rDS(on)

SuperSOT™–6 package: small footprint (72% smaller than standard SO-8; low profile (1mm thick)

HBM ESD protection level > 2kV typical (Note 3)

Manufactured using green packaging material

Halide-Free

RoHS Compliant

General Description

This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

These devices have been designed to offer exceptional power dissipation in a very small footprint compared with bigger SO-8 and TSSOP-8 packages.

Applications

DC - DC Conversion

Load switch

Battery Protection