P-Channel 2.5V PowerTrench Specified MOSFET -20V, -4.5A, 43mohm

General Description This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance These devices are well

P 沟道，PowerTrench® MOSFET，2.5V 指定，-20V，-4.5A，43mΩ

此 P 沟道 2.5V 额定 MOSFET 采用飞兆半导体先进的 PowerTrench 工艺生产，这一先进工艺是专为最大限度地降低导通阻抗并保持低栅极电荷以获得卓越开关性能而定制的。这些器件非常适合负载开关、电源管理、电池充电电路和 DC/DC 转换等电池电源应用。 •最大值 rDS(ON)=43 mΩ，条件是 VGS=-4.5 V、ID=-4.5 A\n•最大值 rDS(ON)=68 mΩ，条件是 VGS=-2.5 V、ID=-3.8 A\n•低栅极电荷（典型值8nC）。\n•高性能沟道技术可实现极低的 rDS(on)\n•SuperSOT™ -6 封装：小尺寸（比标准 SO¨C8 小 72%）超薄（1 mm 厚）。\n•符合 RoHS 标准\n•采用绿色封装材料生产。\n•无卤素;

PNP EPITAXIAL SILICON TRANSISTOR

SWITCHING AND AMPLIFIER APPLICATIONS • Complement to BC635/637/639

High Current Transistors(PNP Silicon)

High Current Transistors PNP Silicon

PNP medium power transistors

DESCRIPTION PNP medium power transistor in a TO-92; SOT54 plastic package. NP complements: BC635, BC637 and BC639. FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Audio and video amplifiers.

High Current Transistors

High Current Transistors PNP Silicon

PNP Silicon AF Transistors (High current gain High collector current)

PNP Silicon AF Transistors ● High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BC 635, BC 637, BC 639 (NPN)