N-Channel Enhancement Mode Field Effect Transistor

General Description This N-Channel enhancement mode power field effect transistors is produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance. These devices are particularly suited for low voltage applic

N-Channel Enhancement Mode Field Effect Transistor

633M Series D-Sub Connectors | Machined Pins | High Density Three Contact Rows with 0.350 (8.89mm) Footprint Right Angle Bend | Plug

Features High Density Three Contact Rows with .350(8.89mm) Footprint Right Angle Bend with Machined Contacts .090(2.29mm) Contact Spacing 0.078(1.98mm) Row Spacing Plug and Receptacle in 15, 26, 44 or 62 Contact Sizes Pin and Socket Contact Mating Design with P.C. Tail Termination M

633 Series D-Sub Connectors | High Density Three Contact Rows with .350(8.89mm) Footprint RightAngle Bend | Plug

Features High Density Three Contact Rows with .350(8.89mm) Footprint Right Angle Bend Standard Contact Spacing and Row Spacing Optional 9th pin recessed on 15 Contact Size in accordance with VESA Display Data Channel Standard Plug and Receptacle in 15, 26, 44, 62 or 78 Contact Sizes

633W Series D-Sub Connectors | Waterproof | High Density | 0.090 (2.29mm) Contact Spacing x 0.078 (1.98mm) Row Spacing | Right Angle | Plug

Features High Density Waterproof D-Sub .090(2.29mm) Contact Spacing x .078(1.98mm) Row Spacing Plug and Receptacle in 15, 26 or 44 Contact Pin Sizes Pin Contact Mating Design with P.C. Tail Termination in Right Angle, Straight or Solder Cup Termination Plug Shell Indents Provide Gro

Low Frequencies

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60V Complementary Enhancement Mode Field Effect Transistor

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