Integrated Load Switch

General Description These Integrated Load Switches are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited

Integrated Load Switch

General Description These Integrated Load Switches are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited

集成式负载开关

这些集成的负载开关采用飞兆专有的、高单元密度DMOS技术生产。 这种密度非常高的工艺是专为最大限度地降低导通阻抗并保持卓越开关性能而定制的。 这些器件特别适合需要低传导损耗和轻松驱动的低压高边负载开关应用。 •VDROP=0.2V @ VIN=5V，IL=1A，VON/OFF= 1.5V至8V VDROP=0.3V @ VIN=3.3V，IL=1A，VON/OFF= 1.5V至8V\n•为极低导通电阻而设计的高单元密度\n•VON/OFF齐纳管可增强耐静电放电能力>6kV人体模型\n•SuperSOT™-6封装设计（使用铜引线框架），可提供出色的热和电气能力;

封装/外壳：SOT-23-6 细型，TSOT-23-6 包装：管件 描述：IC PWR SWITCH P-CH 1:1 SUPERSOT6 集成电路（IC） 配电开关，负载驱动器

丝印代码：323K；Load Switch with Level-Shift

Product Summary ● -2.3A,-8V ● RDS(ON)-55m2 @ VGS=4.5V(Typ) ● RDS(ON)=65m2 @ VGS=2.5V(Typ) ● FDC6331L Pin to Pin fully compatible

Integrated Load Switch

General Description These Integrated Load Switches are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited

Integrated Load Switch

General Description This device is particularly suited for compact power management in portable electronic equipment where 2.5V to 8V input and 0.6A output current capability are needed. This load switch integrates a small N-Channel power MOSFET (Q1) which drives a large P-Channel power MOSFET (Q

64K x 16 Bit 3.3 V Asynchronous Fast Static RAM

文件：181.92 Kbytes Page：12 Pages

Sound fader control circuit

文件：229.63 Kbytes Page：36 Pages

Sound fader control circuit

文件：229.63 Kbytes Page：36 Pages