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型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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NCE6 | CIT SWITCH 文件:252.92 Kbytes Page:3 Pages | CIT CIT Relay & Switch | ||
NCE N-Channel Enhancement Mode Power MOSFET Description TheNCE6003usesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Thisdeviceissuitablefor useasaBatteryprotectionorinotherswitchingapplication.GeneralFeatures ●VDS=60V,ID=3A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | |||
N-Channel 60-V (D-S) MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Available •TrenchFET®PowerMOSFET •100RgTested •100UISTested APPLICATIONS •BatterySwitch •DC/DCConverter | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
NCE N-Channel Enhancement Mode Power MOSFET Description TheNCE6003Musesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatechargeandoperationwithgate voltagesaslowas2.5V.Thisdeviceissuitableforuseasa Batteryprotectionorinotherswitchingapplication. GeneralFeature ●VDS=60V,ID=3.0A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | |||
NCE N-Channel Enhancement Mode Power MOSFET Description TheNCE6003Xusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Thisdeviceissuitablefor useasaBatteryprotectionorinotherswitchingapplication.GeneralFeatures ●VDS=60V,ID=3A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | |||
NCE N-Channel Enhancement Mode Power MOSFET Description TheNCE6003XMusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Thisdeviceissuitablefor useasaBatteryprotectionorinotherswitchingapplication.GeneralFeatures ●VDS=60V,ID=3A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | |||
NCE N-Channel Enhancement Mode Power MOSFET Description TheNCE6003XYusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Thisdeviceissuitablefor useasaBatteryprotectionorinotherswitchingapplication.GeneralFeatures ●VDS=60V,ID=3A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | |||
N-Channel 60-V (D-S) MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Available •TrenchFET®PowerMOSFET •100RgTested •100UISTested APPLICATIONS •BatterySwitch •DC/DCConverter | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
NCE N-Channel Enhancement Mode Power MOSFET Description TheNCE6004usesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Thisdeviceissuitablefor useasaBatteryprotectionorinotherswitchingapplication. GeneralFeatures ●VDS=60V,ID=4A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | |||
NCE N-Channel Enhancement Mode Power MOSFET Description TheNCE6005ANusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=5A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | |||
NCE N-Channel Enhancement Mode Power MOSFET Description TheNCE6005ARusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=5A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | |||
NCE N-Channel Enhancement Mode Power MOSFET Description TheNCE6005ASusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=5A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | |||
NCE N-Channel Enhancement Mode Power MOSFET Description TheNCE6007Susesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=60V,ID=7A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | |||
NCE N-Channel Enhancement Mode Power MOSFET Description TheNCE6009XSusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=9A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | |||
NCE N-Channel Enhancement Mode Power MOSFET Description TheNCE6010Jusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=60V,ID=10A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | |||
NCE N-Channel Enhancement Mode Power MOSFET Description TheNCE6012ASusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=12A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | |||
NCE N-Channel Enhancement Mode Power MOSFET Description TheNCE6012CSusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=60V,ID=12A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | |||
NCE N-Channel Enhancement Mode Power MOSFET Description TheNCE6020Ausesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=20A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | |||
NCE N-Channel Enhancement Mode Power MOSFET Description TheNCE6020AIusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=20A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | |||
NCE N-Channel Enhancement Mode Power MOSFET Description TheNCE6020ALusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=20A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | |||
NCE N-Channel Enhancement Mode Power MOSFET Description heNCE6020AQusesadvancedtrenchtechnologyanddesignto provideexcellentRDS(ON)withlowgatecharge.Itcanbeusedina widevarietyofapplications. Application ●Powerswitchingapplication ●Hardswitchedandhighfrequencycircuits ●Uninterruptiblepowersupply G | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | |||
NCE N-Channel Enhancement Mode Power MOSFET Description TheNCE6025Qusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=25A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | |||
NCE N-Channel Enhancement Mode Power MOSFET Description TheNCE6030Kusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=60V,ID=30A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | |||
NCE N&P-Channel complementary Power MOSFET Description TheNCE603583usesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures Nchannel ●VDS=60V,ID=40A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | |||
NCE N-Channel Enhancement Mode Power MOSFET Description TheNCE6042AGusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=42A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | |||
NCE N-Channel Enhancement Mode Power MOSFET Description TheNCE6045Gusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=60V,ID=45A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | |||
NCE N-Channel Enhancement Mode Power MOSFET Description TheNCE6045XAGusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.Application ●Powerswitchingapplication ●Loadswitch Description TheNCE6045XAGusesadvancedtrenchtechnologyand | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | |||
NCE N-Channel Enhancement Mode Power MOSFET Description TheNCE6045XGusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.Itcan beusedinawidevarietyofapplications.Application ●DC/DCConverter ●Idealforhigh-frequencyswitchingandsynchronous rectification GeneralFeatures ●VDS | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | |||
NCE N-Channel Enhancement Mode Power MOSFET Description TheNCE6050Ausesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=50A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | |||
NCE N-Channel Enhancement Mode Power MOSFET Description TheNCE6050IAusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=50A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | |||
NCE N-Channel Enhancement Mode Power MOSFET Description TheNCE6058AKusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=58A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | |||
NCE N-Channel Enhancement Mode Power MOSFET Description TheNCE6065AGusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=65A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | |||
NCE N-Channel Enhancement Mode Power MOSFET Description TheNCE6065Gusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=65A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | |||
NCE N-Channel Enhancement Mode Power MOSFET Description TheNCE6080usesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=80A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | |||
NCE N-Channel Enhancement Mode Power MOSFET Description TheNCE6080Ausesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=80A RDS(ON)=6.5mΩ(typical)@VGS=10V RDS(ON)=7.5mΩ(typical)@VGS=4.5V ●Highdensityce | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | |||
NCE N-Channel Enhancement Mode Power MOSFET Description TheNCE6080AIusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=80A RDS(ON)=5.5mΩ(typical)@VGS=10V RDS(ON)=6.5mΩ(typical)@VGS=4.5V ●Highdensityc | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | |||
NCE N-Channel Enhancement Mode Power MOSFET Description TheNCE6080AKusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=80A RDS(ON)=6mΩ(typical)@VGS=10V RDS(ON)=7mΩ(typical)@VGS=4.5V ●Highdensitycell | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | |||
NCE N-Channel Enhancement Mode Power MOSFET Description TheNCE6080ATusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=80A RDS(ON)=5.5mΩ(typical)@VGS=10V RDS(ON)=6.5mΩ(typical)@VGS=4.5V ●Highdensityc | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | |||
NCE N-Channel Enhancement Mode Power MOSFET Description TheNCE6080Dusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=80A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | |||
NCE N-Channel Enhancement Mode Power MOSFET Description TheNCE6080EDusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=80A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | |||
NCE N-Channel Enhancement Mode Power MOSFET Description TheNCE6080EKusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=80A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | |||
NCE N-Channel Enhancement Mode Power MOSFET Description TheNCE60H10Dusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.This deviceissuitableforuseinPWM,loadswitchingandgeneral purposeapplications.GeneralFeatures ●VDS=60V,ID=100A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | |||
NCE N-Channel Enhancement Mode Power MOSFET Description TheNCE60H10Kusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.This deviceissuitableforuseinPWM,loadswitchingandgeneral purposeapplications.GeneralFeatures ●VDS=60V,ID=100A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | |||
NCE N-Channel Enhancement Mode Power MOSFET Description TheNCE60H15Ausesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=150A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | |||
NCE N-Channel Enhancement Mode Power MOSFET Description TheNCE60H15ADusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=150A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | |||
NCE N-Channel Enhancement Mode Power MOSFET Description TheNCE60H15ATusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=150A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | |||
NCE N-Channel Enhancement Mode Power MOSFET Description TheNCE60H15Tusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=150A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | |||
NCE N-Channel Enhancement Mode Power MOSFET Description TheNCE60H18usesadvancedtrenchtechnologyanddesign toprovideexcellentRDS(ON)withlowgatecharge.Thisdeviceis suitableforuseinPWM,loadswitchingandgeneralpurpose applications.GeneralFeatures ●VDS=60V,ID=180A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | |||
NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION TheNCE60H21usesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GENERALFEATURES ●VDS=60V,ID=210A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | |||
NCE N-Channel Enhancement Mode Power MOSFET Description TheNCE60H28LLusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.Application ●Powerswitchingapplication ●Hardswitchedandhighfrequencycircuits ●Uninterruptiblepowersupply Gen | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | |||
NCE N-Channel Enhancement Mode Power MOSFET Description TheNCE60H30Tusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=300A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | |||
NCE N-Channel Enhancement Mode Power MOSFET Description TheNCE60ND03Nusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatechargeandoperationwith gatevoltagesaslowas2.5V.Thisdeviceissuitableforuseas aBatteryprotectionorinotherswitchingapplication.GeneralFeatures ●VDS=60V,ID=3A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | |||
NCE N-Channel Enhancement Mode Power MOSFET Description TheNCE60ND03Susesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatechargeandoperationwith gatevoltagesaslowas2.5V.Thisdeviceissuitableforuseas aBatteryprotectionorinotherswitchingapplication.GeneralFeatures ●VDS=60V,ID=3A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | |||
NCE N-Channel Enhancement Mode Power MOSFET Description TheNCE60ND08Susesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=60V,ID=8A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | |||
NCE N-Channel Enhancement Mode Power MOSFET Description TheNCE60ND45AGusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.Itcan beusedinawidevarietyofapplications.Application ●DC/DCConverter ●Idealforhigh-frequencyswitchingandsynchronous rectification | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | |||
NCE N-Channel Enhancement Mode Power MOSFET Description TheNCE60ND45XGusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.Application ●Powerswitchingapplication ●Loadswitch | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | |||
NCE 60V Complementary MOSFET Description TheNCE60NP09Susesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures Nchannel ●VDS=60V,ID=9A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | |||
NCE N&P-Channel complementary Power MOSFET Description TheNCE60NP1515Kusesadvancedtrenchtechnology anddesigntoprovideexcellentRDS(ON)withlowgate charge.Itcanbeusedinawidevarietyofapplications. GeneralFeatures Nchannel ●VDS=60V,ID=15A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | |||
NCE N&P-Channel complementary Power MOSFET Description TheNCE60NP2012Kusesadvancedtrenchtechnology anddesigntoprovideexcellentRDS(ON)withlowgate charge.Itcanbeusedinawidevarietyofapplications. GeneralFeatures Nchannel ●VDS=60V,ID=20A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | |||
NCE N&P-Channel complementary Power MOSFET Description TheNCE60NP2016Gusesadvancedtrenchtechnology anddesigntoprovideexcellentRDS(ON)withlowgate charge.Itcanbeusedinawidevarietyofapplications. GeneralFeatures Nchannel ●VDS=60V,ID=20A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 |
NCE6产品属性
- 类型
描述
- 型号
NCE6
- 制造商
CIT
- 制造商全称
CIT Relay & Switch
- 功能描述
CIT SWITCH
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
23+ |
TO-252 |
20000 |
原厂原装正品现货 |
||||
新洁能 |
24+ |
NA |
250000 |
原装现货 |
|||
NCE/新洁能 |
22+ |
TO-220F |
5623 |
只做原装正品现货!或订货假一赔十! |
|||
NCE |
19+ |
TO-220 |
2336 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
NCE/新洁能 |
21+ |
TO-252 |
20000 |
原装现货假一赔十 |
|||
NCE |
2016+ |
TO-220 |
3900 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
NCE新洁能 |
22+ |
TO-247 |
100000 |
新结能全线供应,支持终端生产 |
|||
NCE/新洁能 |
21+ |
TO-252 |
49950 |
只有原装,支持实单 |
|||
NCE/新洁能 |
ROHS/NEW. |
原封ORIGIANL |
30050 |
原装,元器件供应/半导体 |
|||
NCE(无锡新洁能) |
23+ |
TO-220 |
5000 |
诚信服务,绝对原装原盘 |
NCE6规格书下载地址
NCE6参数引脚图相关
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- NCE75H21T
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- NCE7580
- NCE7578
- NCE7560K
- NCE7190
- NCE7080
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- NCE6990
- NCE6890
- NCE6802
- NCE6602
- NCE60-T01
- NCE60-S05
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- NCE6090
- NCE6075
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- NCE4525
- NCE4435
- NCE4080
- NCE4
- NCE3420
- NCE3417
- NCE3416
- NCE3415
- NCE3407
- NCE3404
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NCE6数据表相关新闻
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84