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NCE6

CIT SWITCH

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CIT

CIT Relay & Switch

CIT

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE6003usesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Thisdeviceissuitablefor useasaBatteryprotectionorinotherswitchingapplication.GeneralFeatures ●VDS=60V,ID=3A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER

N-Channel 60-V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Available •TrenchFET®PowerMOSFET •100RgTested •100UISTested APPLICATIONS •BatterySwitch •DC/DCConverter

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE6003Musesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatechargeandoperationwithgate voltagesaslowas2.5V.Thisdeviceissuitableforuseasa Batteryprotectionorinotherswitchingapplication. GeneralFeature ●VDS=60V,ID=3.0A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE6003Xusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Thisdeviceissuitablefor useasaBatteryprotectionorinotherswitchingapplication.GeneralFeatures ●VDS=60V,ID=3A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE6003XMusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Thisdeviceissuitablefor useasaBatteryprotectionorinotherswitchingapplication.GeneralFeatures ●VDS=60V,ID=3A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE6003XYusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Thisdeviceissuitablefor useasaBatteryprotectionorinotherswitchingapplication.GeneralFeatures ●VDS=60V,ID=3A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER

N-Channel 60-V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Available •TrenchFET®PowerMOSFET •100RgTested •100UISTested APPLICATIONS •BatterySwitch •DC/DCConverter

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE6004usesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Thisdeviceissuitablefor useasaBatteryprotectionorinotherswitchingapplication. GeneralFeatures ●VDS=60V,ID=4A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE6005ANusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=5A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE6005ARusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=5A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE6005ASusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=5A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE6007Susesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=60V,ID=7A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE6009XSusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=9A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE6010Jusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=60V,ID=10A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE6012ASusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=12A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE6012CSusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=60V,ID=12A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE6020Ausesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=20A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE6020AIusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=20A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE6020ALusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=20A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER

NCE N-Channel Enhancement Mode Power MOSFET

Description heNCE6020AQusesadvancedtrenchtechnologyanddesignto provideexcellentRDS(ON)withlowgatecharge.Itcanbeusedina widevarietyofapplications. Application ●Powerswitchingapplication ●Hardswitchedandhighfrequencycircuits ●Uninterruptiblepowersupply G

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE6025Qusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=25A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE6030Kusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=60V,ID=30A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER

NCE N&P-Channel complementary Power MOSFET

Description TheNCE603583usesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures Nchannel ●VDS=60V,ID=40A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE6042AGusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=42A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE6045Gusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=60V,ID=45A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE6045XAGusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.Application ●Powerswitchingapplication ●Loadswitch Description TheNCE6045XAGusesadvancedtrenchtechnologyand

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE6045XGusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.Itcan beusedinawidevarietyofapplications.Application ●DC/DCConverter ●Idealforhigh-frequencyswitchingandsynchronous rectification GeneralFeatures ●VDS

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE6050Ausesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=50A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE6050IAusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=50A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE6058AKusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=58A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE6065AGusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=65A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE6065Gusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=65A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE6080usesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=80A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE6080Ausesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=80A RDS(ON)=6.5mΩ(typical)@VGS=10V RDS(ON)=7.5mΩ(typical)@VGS=4.5V ●Highdensityce

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE6080AIusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=80A RDS(ON)=5.5mΩ(typical)@VGS=10V RDS(ON)=6.5mΩ(typical)@VGS=4.5V ●Highdensityc

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE6080AKusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=80A RDS(ON)=6mΩ(typical)@VGS=10V RDS(ON)=7mΩ(typical)@VGS=4.5V ●Highdensitycell

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE6080ATusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=80A RDS(ON)=5.5mΩ(typical)@VGS=10V RDS(ON)=6.5mΩ(typical)@VGS=4.5V ●Highdensityc

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE6080Dusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=80A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE6080EDusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=80A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE6080EKusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=80A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE60H10Dusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.This deviceissuitableforuseinPWM,loadswitchingandgeneral purposeapplications.GeneralFeatures ●VDS=60V,ID=100A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE60H10Kusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.This deviceissuitableforuseinPWM,loadswitchingandgeneral purposeapplications.GeneralFeatures ●VDS=60V,ID=100A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE60H15Ausesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=150A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE60H15ADusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=150A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE60H15ATusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=150A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE60H15Tusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=150A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE60H18usesadvancedtrenchtechnologyanddesign toprovideexcellentRDS(ON)withlowgatecharge.Thisdeviceis suitableforuseinPWM,loadswitchingandgeneralpurpose applications.GeneralFeatures ●VDS=60V,ID=180A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER

NCE N-Channel Enhancement Mode Power MOSFET

DESCRIPTION TheNCE60H21usesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GENERALFEATURES ●VDS=60V,ID=210A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE60H28LLusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.Application ●Powerswitchingapplication ●Hardswitchedandhighfrequencycircuits ●Uninterruptiblepowersupply Gen

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE60H30Tusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=300A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE60ND03Nusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatechargeandoperationwith gatevoltagesaslowas2.5V.Thisdeviceissuitableforuseas aBatteryprotectionorinotherswitchingapplication.GeneralFeatures ●VDS=60V,ID=3A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE60ND03Susesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatechargeandoperationwith gatevoltagesaslowas2.5V.Thisdeviceissuitableforuseas aBatteryprotectionorinotherswitchingapplication.GeneralFeatures ●VDS=60V,ID=3A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE60ND08Susesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=60V,ID=8A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE60ND45AGusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.Itcan beusedinawidevarietyofapplications.Application ●DC/DCConverter ●Idealforhigh-frequencyswitchingandsynchronous rectification

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER

NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE60ND45XGusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.Application ●Powerswitchingapplication ●Loadswitch

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER

NCE 60V Complementary MOSFET

Description TheNCE60NP09Susesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures Nchannel ●VDS=60V,ID=9A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER

NCE N&P-Channel complementary Power MOSFET

Description TheNCE60NP1515Kusesadvancedtrenchtechnology anddesigntoprovideexcellentRDS(ON)withlowgate charge.Itcanbeusedinawidevarietyofapplications. GeneralFeatures Nchannel ●VDS=60V,ID=15A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER

NCE N&P-Channel complementary Power MOSFET

Description TheNCE60NP2012Kusesadvancedtrenchtechnology anddesigntoprovideexcellentRDS(ON)withlowgate charge.Itcanbeusedinawidevarietyofapplications. GeneralFeatures Nchannel ●VDS=60V,ID=20A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER

NCE N&P-Channel complementary Power MOSFET

Description TheNCE60NP2016Gusesadvancedtrenchtechnology anddesigntoprovideexcellentRDS(ON)withlowgate charge.Itcanbeusedinawidevarietyofapplications. GeneralFeatures Nchannel ●VDS=60V,ID=20A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER

NCE6产品属性

  • 类型

    描述

  • 型号

    NCE6

  • 制造商

    CIT

  • 制造商全称

    CIT Relay & Switch

  • 功能描述

    CIT SWITCH

更新时间:2024-9-23 19:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
23+
TO-252
20000
原厂原装正品现货
新洁能
24+
NA
250000
原装现货
NCE/新洁能
22+
TO-220F
5623
只做原装正品现货!或订货假一赔十!
NCE
19+
TO-220
2336
一级代理,专注军工、汽车、医疗、工业、新能源、电力
NCE/新洁能
21+
TO-252
20000
原装现货假一赔十
NCE
2016+
TO-220
3900
只做原装,假一罚十,公司可开17%增值税发票!
NCE新洁能
22+
TO-247
100000
新结能全线供应,支持终端生产
NCE/新洁能
21+
TO-252
49950
只有原装,支持实单
NCE/新洁能
ROHS/NEW.
原封ORIGIANL
30050
原装,元器件供应/半导体
NCE(无锡新洁能)
23+
TO-220
5000
诚信服务,绝对原装原盘

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