CIT SWITCH

文件：252.92 Kbytes Page：3 Pages

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6003 uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other switching application. General Features ● VDS =60V,ID =3A RDS(ON)

N-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Battery Switch • DC/DC Converter

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6003M uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. General Feature ● VDS =60V,ID =3.0A RDS(ON)

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6003X uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other switching application. General Features ● VDS =60V,ID =3A RDS(ON)

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6003XM uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other switching application. General Features ● VDS =60V,ID =3A RDS(ON)

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6003XY uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other switching application. General Features ● VDS =60V,ID =3A RDS(ON)

N-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Battery Switch • DC/DC Converter

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6004 uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other switching application. General Features ● VDS =60V,ID =4A RDS(ON)

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6005AN uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS=60V,ID=5A RDS(ON)

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6005AR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS=60V,ID=5A RDS(ON)

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6005AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS=60V,ID=5A RDS(ON)

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6007S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =7A RDS(ON)

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6009XS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 60V,ID =9A RDS(ON)

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6010J uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =10A RDS(ON)

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6012AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 60V,ID =12A RDS(ON)

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6012CS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 60V,ID =12A RDS(ON)

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6020A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =20A RDS(ON)

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6020AI uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =20A RDS(ON)

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6020AL uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =20A RDS(ON)

NCE N-Channel Enhancement Mode Power MOSFET

Description he NCE6020AQ uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply G

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6025Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =25A RDS(ON)

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6030K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =30A RDS(ON)

NCE N&P-Channel complementary Power MOSFET

Description The NCE603583 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features N channel ● VDS =60V,ID =40A RDS(ON)

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6042AG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =42A RDS(ON)

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6045G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 60V,ID =45A RDS(ON)

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6045XAG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● Power switching application ● Load switch Description The NCE6045XAG uses advanced trench technology and

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6045XG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● DC/DC Converter ● Ideal for high-frequency switching and synchronous rectification General Features ● VDS

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6050A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =50A RDS(ON)

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6050IA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =50A RDS(ON)

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6058AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =58A RDS(ON)

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6065AG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =65A RDS(ON)

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6065G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =65A RDS(ON)

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6080 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON)

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6080A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON)=6.5mΩ (typical) @ VGS=10V RDS(ON)=7.5mΩ (typical) @ VGS=4.5V ● High density ce

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6080AI uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON)=5.5mΩ (typical) @ VGS=10V RDS(ON)=6.5mΩ (typical) @ VGS=4.5V ● High density c

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6080AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON)=6mΩ (typical) @ VGS=10V RDS(ON)=7mΩ (typical) @ VGS=4.5V ● High density cell

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6080AT uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON)=5.5mΩ (typical) @ VGS=10V RDS(ON)=6.5mΩ (typical) @ VGS=4.5V ● High density c

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6080D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON)

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6080ED uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON)

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6080EK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON)

N and P-Channel Enhancement Mode Power MOSFET

Description The NCE609 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS =40V,ID =21A RDS(ON)

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE60H10D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features ● VDS =60V,ID =100A RDS(ON)

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE60H10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features ● VDS =60V,ID =100A RDS(ON)

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE60H15A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =150A RDS(ON)

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 150A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 3.1mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE60H15AD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =150A RDS(ON)

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE60H15AT uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =150A RDS(ON)

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE60H15T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =150A RDS(ON)

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE60H18 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features ● VDS =60V,ID =180A RDS(ON)

NCE N-Channel Enhancement Mode Power MOSFET

DESCRIPTION The NCE60H21 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES ● VDS =60V ,ID =210A RDS(ON)

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE60H28LL uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Gen

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE60H30T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =300A RDS(ON)

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE60ND03N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. General Features ● VDS =60V,ID =3A RDS(ON)

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE60ND03S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. General Features ● VDS =60V,ID =3A RDS(ON)

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE60ND08S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 60V,ID =8A RDS(ON)

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE60ND45AG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● DC/DC Converter ● Ideal for high-frequency switching and synchronous rectification

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE60ND45XG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● Power switching application ● Load switch

NCE 60V Complementary MOSFET

Description The NCE60NP09S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features N channel ● VDS =60V,ID =9A RDS(ON)

NCE N&P-Channel complementary Power MOSFET

Description The NCE60NP1515K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features N channel ● VDS =60V,ID =15A RDS(ON)