Description

The NCE609 uses advanced trench technology to provide

excellent RDS(ON) and low gate charge . The complementary

MOSFETs may be used to form a level shifted high side

switch, and for a host of other applications.

General Features

● N-Channel

VDS =40V,ID =21A

RDS(ON) < 19mΩ @ VGS=10V

RDS(ON) < 29mΩ @ VGS=4.5V

● P-Channel

VDS =-40V,ID = -14A

RDS(ON) <35mΩ @ VGS=-10V

RDS(ON) < 45mΩ @ VGS=-4.5V

● High power and current handing capability

● Lead free product is acquired

● Surface mount package