丝印代码：NCE60H15A；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE60H15A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =150A RDS(ON)

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 150A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 3.1mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

12-200V N-Channel Trench MOSFET

isc N-Channel MOSFET Transistor

文件：333.47 Kbytes Page：2 Pages

丝印代码：NCE60H15AD；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE60H15AD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =150A RDS(ON)

丝印代码：NCE60H15AT；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE60H15AT uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =150A RDS(ON)

12-200V N-Channel Trench MOSFET

12-200V N-Channel Trench MOSFET

NCE N-Channel Enhancement Mode Power MOSFET

文件：411.77 Kbytes Page：7 Pages