丝印代码：NCE6050IA；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6050IA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =50A RDS(ON)

12-200V N-Channel Trench MOSFET

N-Channel 60 V (D-S) MOSFET

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SWITCHING DIODE

Switching Diode

N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, a

High-speed diode

DESCRIPTION The PMBD6050 is a high-speed switching diode fabricated in planar technology, and encapsulated in the small SOT23 plastic SMD package. FEATURES • Small plastic SMD package • High switching speed: max. 4 ns • Continuous reverse voltage: max. 70 V • Repetitive peak reverse voltage:

SCRs 1-70 AMPS NON-SENSITIVE GATE

Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip

Silicon Switching Diode

Silicon Switching Diode ● For high-speed switching applications