丝印代码：NCE6009XS；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6009XS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 60V,ID =9A RDS(ON)

12-200V N-Channel Trench MOSFET

1關A SOT23 Precision Shunt Voltage Reference

General Description The MAX6006–MAX6009 ultra-low-power shunt references are ideal for space-critical and low-power applications. They are offered in 3-pin SOT23 packages, and the minimum operating current is guaranteed to be Features ● Ultra-Low Operating Current: Guaranteed

Fast Recovery Rectifier, 40A, 200ns

Description: The NTE6006 through NTE6011 are fast recovery silicon rectifiers in a DO5 type package designed for special applications such as DC power supplies, inverters, converters, ultrasonic systems, choppers, low RF interference, sonar power supplies, and free wheeling diodes. A complete lin

SHOCK SENSOR IC (1ch VERSION)

Shock Sensor IC (1 ch version) TA6009FN/FNG detects an existence of external shock through the shock sensor and output. Features • TA6009FN/FNG operates from 2.7 to 5.5 V DC single power supply voltage. • Signal from the shock sensor is amplified according to setting gain, and is detected thro

9 Channel Buffer Amplifier for TFT-LCD

文件：115.36 Kbytes Page：7 Pages

9 Channel Buffer Amplifier for TFT-LCD

文件：115.36 Kbytes Page：7 Pages