位置:NCE6012AS > NCE6012AS详情

NCE6012AS中文资料

厂家型号

NCE6012AS

文件大小

803.89Kbytes

页面数量

10

功能描述

NCE N-Channel Enhancement Mode Power MOSFET

数据手册

下载地址一下载地址二

生产厂商

NCEPOWER

NCE6012AS数据手册规格书PDF详情

Description

The NCE6012AS uses advanced trench technology and

design to provide excellent RDS(ON) with low gate charge. It

can be used in a wide variety of applications. General Features

● VDS = 60V,ID =12A

RDS(ON) < 8mΩ @ VGS=10V (Typ:6.5mΩ)

RDS(ON) < 9mΩ @ VGS=4.5V (Typ:7.5mΩ)

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Low gate to drain charge to reduce switching losses

Application

● Power switching application

● Load switch

更新时间:2025-11-1 13:30:00
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