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NCE60H10D中文资料

厂家型号

NCE60H10D

文件大小

611.83Kbytes

页面数量

7

功能描述

NCE N-Channel Enhancement Mode Power MOSFET

数据手册

下载地址一下载地址二

生产厂商

NCEPOWER

NCE60H10D数据手册规格书PDF详情

Description

The NCE60H10D uses advanced trench technology and

design to provide excellent RDS(ON) with low gate charge. This

device is suitable for use in PWM, load switching and general

purpose applications. General Features

● VDS =60V,ID =100A

RDS(ON) < 5.2mΩ @ VGS=10V (Typ:4.5mΩ)

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Special designed for convertors and power controls

● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation

● Special process technology for high ESD capability

Application

● Power switching application

● Hard switched and High frequency circuits

● Uninterruptible power supply

更新时间:2025-11-1 9:01:00
供应商 型号 品牌 批号 封装 库存 备注 价格
NCE POWER
24+
con
35960
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NCE新洁能
21+
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30000
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23+
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50000
全新原装正品现货,支持订货
NCE
21+
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10000
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NCE/新洁能
2022+
TO-220F
50000
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NCE/新洁能
23+
TO-220
89630
当天发货全新原装现货
NCE新洁能
22+
TO-220F
100000
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NCE/新洁能
20+
TO-220F
300000
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NCE
23+
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15000
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