Description

The NCE6080AI uses advanced trench technology and

design to provide excellent RDS(ON) with low gate charge. It

can be used in a wide variety of applications. General Features

● VDS =60V,ID =80A

RDS(ON)=5.5mΩ (typical) @ VGS=10V

RDS(ON)=6.5mΩ (typical) @ VGS=4.5V

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation

Application

● PWM

● Load Switching