型号 功能描述 生产厂家&企业 LOGO 操作
NCE6080A

NCEN-ChannelEnhancementModePowerMOSFET

Description TheNCE6080Ausesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=80A RDS(ON)=6.5mΩ(typical)@VGS=10V RDS(ON)=7.5mΩ(typical)@VGS=4.5V ●Highdensityce

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER

NCEN-ChannelEnhancementModePowerMOSFET

Description TheNCE6080AIusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=80A RDS(ON)=5.5mΩ(typical)@VGS=10V RDS(ON)=6.5mΩ(typical)@VGS=4.5V ●Highdensityc

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER

NCEN-ChannelEnhancementModePowerMOSFET

Description TheNCE6080AKusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=80A RDS(ON)=6mΩ(typical)@VGS=10V RDS(ON)=7mΩ(typical)@VGS=4.5V ●Highdensitycell

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER

NCEN-ChannelEnhancementModePowerMOSFET

Description TheNCE6080ATusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=80A RDS(ON)=5.5mΩ(typical)@VGS=10V RDS(ON)=6.5mΩ(typical)@VGS=4.5V ●Highdensityc

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCEPOWER

IECApplianceInletC14/C18,Screw-onmounting,Frontside,Quick-connect

Description -Panelmount: Screw-onmounting,FrontSide -ApplianceInlet,Pintemperature70°C,protectionclassIorII -Availableinblackandwhite

SCHURTERSchurter Inc.

硕特硕特集团

SCHURTER

UVPowerMETERS

AWideLineupof248nm,365nmand436nmType TheC6080seriesisacompactUVpowermeterspecificallydesignedtomeasuretheintensityofUVradiationemittedfromthelightguideoutputendofaUVspotlightsource.TheC6080usesaUVsensorthatexhibitsstablesensitivityevenafter

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

HAMAMATSU

DualEnhancementModeFieldEffectTransistor(NandPChannel)

FEATURES ■60V,5.6A,RDS(ON)=45mΩ@VGS=10V. RDS(ON)=75mΩ@VGS=4.5V. ■-60V,-3.3A,RDS(ON)=130mΩ@VGS=-10V. RDS(ON)=180mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapabi

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET

N-ChannelTrenchPowerMOSFET

文件:645.11 Kbytes Page:7 Pages

FUMANSHENZHEN FUMAN ELECTRONICS CO., LTD.

富满微电子深圳市富满微电子集团股份有限公司

FUMAN

N-ChannelTrenchPowerMOSFET

文件:650.48 Kbytes Page:7 Pages

FUMANSHENZHEN FUMAN ELECTRONICS CO., LTD.

富满微电子深圳市富满微电子集团股份有限公司

FUMAN
更新时间:2024-6-22 11:36:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
23+
N/A
56000
一级代理放心采购
NCE/新洁能
24+
TO-220
1165
绝对原装现货假一赔十
NCE
23+
TO-220
3005
现货库存,实单请给接受价格
NCE
21+
TO-220
43000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
NCE
23/22+
TO220
5000
代理渠道.实单必成
NCE/新洁能
24+
NA
860000
明嘉莱只做原装正品现货
NCE新洁能
22+
TO-220
100000
新结能全线供应,支持终端生产
无锡新洁能
2112+
TO-220-3
105000
50个/管一级代理专营品牌!原装正品,优势现货,长期
NCE/新洁能
23+
TO-220
50000
全新原装正品现货,支持订货
NCE
22+
TO-220
47500
进口原装 假一罚十 现货

NCE6080A芯片相关品牌

  • API
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