丝印代码：6003X；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6003 uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other switching application. General Features ● VDS =60V,ID =3A RDS(ON)

N-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Battery Switch • DC/DC Converter

12-200V N-Channel Trench MOSFET

丝印代码：6003M；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6003M uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. General Feature ● VDS =60V,ID =3.0A RDS(ON)

丝印代码：6003X；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6003X uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other switching application. General Features ● VDS =60V,ID =3A RDS(ON)

丝印代码：6003XM；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6003XM uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other switching application. General Features ● VDS =60V,ID =3A RDS(ON)

丝印代码：6003XY；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6003XY uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other switching application. General Features ● VDS =60V,ID =3A RDS(ON)

N-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Battery Switch • DC/DC Converter

丝印代码：6003M；LCE N-Channel Enhancement Mode Power MOSFET

文件：994.89 Kbytes Page：6 Pages

12-200V N-Channel Trench MOSFET

12-200V N-Channel Trench MOSFET

NCE N-Channel Enhancement Mode Power MOSFET

文件：293.66 Kbytes Page：7 Pages

SOFTWARE WRITE PROTECT I2C BUS 2KBIT EEPROM

General Description The AK6003A is a 2048-bit serial CMOS E2PROM divided into 256 registers of 8 bits each. The AK6003A can operate full function under wide operating voltage range from 1.8V to 5.5V. The charge up circuit is integrated for high voltage generation that is used for write operation.

SCRs 1-70 AMPS NON-SENSITIVE GATE

Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip

HIGH FREQUENCY SECONDARY RECTIFIER

DESCRIPTION Dual rectifiers suited for Switch Mode Power Supplyand high frequencyDC to DC converters. Packaged either in ISOTOP or in TO-247, this device is intended for use in low voltage, high frequency inverters, free wheeling operation, welding equipmentsand telecom power supplies. FEATURES

HIGH FREQUENCY SECONDARY RECTIFIER

DESCRIPTION Dual rectifiers suited for Switch Mode Power Supplyand high frequencyDC to DC converters. Packaged either in ISOTOP or in TO-247, this device is intended for use in low voltage, high frequency inverters, free wheeling operation, welding equipmentsand telecom power supplies. FEATURES

HIGH FREQUENCY SECONDARY RECTIFIER

DESCRIPTION Dual rectifiers suited for Switch Mode Power Supplyand high frequencyDC to DC converters. Packaged either in ISOTOP or in TO-247, this device is intended for use in low voltage, high frequency inverters, free wheeling operation, welding equipmentsand telecom power supplies. FEATURES