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NCE6050IA中文资料

厂家型号

NCE6050IA

文件大小

769.32Kbytes

页面数量

7

功能描述

NCE N-Channel Enhancement Mode Power MOSFET

数据手册

下载地址一下载地址二

生产厂商

NCEPOWER

NCE6050IA数据手册规格书PDF详情

Description

The NCE6050IA uses advanced trench technology and

design to provide excellent RDS(ON) with low gate charge. It

can be used in a wide variety of applications. General Features

● VDS =60V,ID =50A

RDS(ON) <14mΩ @ VGS=10V

RDS(ON) <19mΩ @ VGS=4.5V

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation

● Special process technology for high ESD capability

Application

● Power switching application

● Hard switched and high frequency circuits

● Uninterruptible power supply

更新时间:2025-11-2 22:58:00
供应商 型号 品牌 批号 封装 库存 备注 价格
NCEPOWER
2016+
SOT-252
3000
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NCEPOWER
25+23+
TO252
67328
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NCEPOWER
24+
TO-252
65200
一级代理/放心采购
NCE
18+
TO-251
41200
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NCE新洁能
21+
TO-251
25000
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无锡新洁能
2447
TO-251
105000
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NCE/新洁能
21+
TO-251
30000
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NCE/新洁能
23+
TO-251
50000
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VB
21+
TO-251
10000
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NCE/新洁能
2022+
TO-251
44106
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