NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6003M uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. General Feature ● VDS =60V,ID =3.0A RDS(ON)

12-200V N-Channel Trench MOSFET

LCE N-Channel Enhancement Mode Power MOSFET

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PLUGS AND JACKS

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TEST TIPS AND PLUGS

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3M??Reusable Respirators

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For 200, 210, 270 and 280 Series

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Thru-Bolts and Mounting Brackets

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